MOSFET
BSS138W-G
N-Channel
RoHS Device
Features
SOT-323
- Low on-resistance.
- Low gate threshold voltage.
- Low input capacitance.
- Fast switching speed.
- Low input/output leakage.
0.053(1.35)
0.045(1.15)
0.087(2.20)
0.079(2.00)
3
1
0.055(1.40)
0.047(1.20)
2
Circuit diagram
3
D
1.Gate
2.Source
3.Drain
1
G
S
2
0.037(0.95)
Typ.
0.004(0.10)
Typ.
0.094(2.40)
0.087(2.20)
0.012(0.30)
Typ.
0.004(0.10)
0.001(0.02)
0.016(0.40)
0.010(0.25)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
(at Ta=25 °C unless otherwise noted)
Parameter
Drain-Source voltage
Drain-Gate voltage
Gate-Source voltage
Drain current
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
-continuous
R
GS
≤
20KΩ
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
R
θJA
T
J
T
STG
Value
50
50
±20
200
200
417
150
-55 to +150
Units
V
V
A
mA
mW
°C/W
°C
°C
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Comchip Technology CO., LTD.
MOSFET
Electrical Characteristics
(at T
A
=25°C unless otherwise noted)
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Gate leakage current
Zero gate voltage drain current
Forward transfer admittance
Drain-source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-off delay time
Symbol
V
(BR) DSS
V
GS(th)
I
GSS
I
DSS
g
FS
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
Conditions
V
GS
=0V , I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
DS
=0V , V
GS
=±20V
V
DS
=50V , V
GS
=0V
V
DS
=25V , I
D
=0.2A , f=1.0MH
Z
V
GS
=10V , I
D
=0.22A
Min
50
0.5
-
-
100
-
-
Typ
75
1.2
-
-
-
1.4
-
-
-
-
-
Max
-
1.5
±100
0.5
-
3.5
50
25
8
20
Units
V
V
nA
µA
mS
Ω
V
DS
=10V , V
GS
=0V,
f=1.0MH
Z
-
-
pF
V
DD
=30V , I
D
=0.2A
R
GEN
=50Ω
-
-
nS
20
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MOSFET
RATING AND CHARACTERISTIC CURVES (BSS138W-G)
Fig.2 - Drain Source Current vs.
Drain Source Voltage
0.6
T
A
=25°C
V
GS
=3.5V
Fig.2 - Transfer Characteristics
0.8
V
DS
=1.0V
-55°C
0.7
0.5
Drain Source Current, I
D
(A)
Drain Source Current, I
D
(A)
V
GS
=3.25V
0.6
0.5
0.4
0.3
0.2
0.1
25°C
0.4
V
GS
=3.0V
0.3
V
GS
=2.75V
150°C
0.2
V
GS
=2.5V
0.1
0
0
1
2
3
4
5
6
7
8
9
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Drain Source Voltage, V
DS
(V)
Gate Source Voltage, V
GS
(V)
Fig.3 - Body D
iode
Current vs. Body D
iode
Voltage
1
100
Fig.4 - Capacitance vs. Drain Source Voltage
V
GS
= 0V
f = 1MHz
Diode Current, I
D
(A)
Capacitance, C (pF)
0.1
150°C
25°C
-55°C
C
ISS
10
C
OSS
0.01
C
rss
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1
0
5
10
15
20
25
30
Diode Forward Voltage, V
SD
(V)
Drain Source Voltage, V
DS
(V)
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MOSFET
Reel Taping Specification
d
F
B
E
W
C
P
A
12
0
o
P0
P1
D
2
D
1
D
W
1
SYMBOL
A
2.40
±
0.10
0.094
±
0.004
B
2.40
±
0.10
0.094
±
0.004
C
1.20
±
0.10
0.047
±
0.004
d
1.50 ± 0.10
0.059 ± 0.004
D
178.00
±
1.00
7.087
±
0.039
D
1
54.40
±
0.50
2.142
±
0.020
D
2
13.00
±
0.50
0.512
±
0.020
SOT-323
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.05
0.138
±
0.002
P
4.00
±
0.10
0.157
±
0.004
P
0
4.00
±
0.10
0.157
±
0.004
P
1
2.00
±
0.05
0.079
±
0.002
W
8.00
+
0.30 /–0.10
0.315
+
0.012 /–0.004
W
1
9.50
±
1.00
0.374
±
0.039
SOT-323
(mm)
(inch)
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Comchip Technology CO., LTD.
MOSFET
Marking Code
Part Number
BSS138W-G
Marking Code
K38
3
XXX
1
2
xxx = Product type marking code
Suggested PAD Layout
B
SOT-323
SIZE
(mm)
A
B
C
D
0.90
0.70
1.30
1.90
(inch)
0.035
0.028
0.051
0.075
D
A
C
Note:
1.The pad layout is for reference purposes only.
Standard Packaging
REEL PACK
Case Type
REEL
( pcs )
Reel Size
(inch)
SOT-323
3,000
7
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