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MT35XU02GCBA1G12-0SIT

Description
NOR FlashSPI FLASH NOR SLC 256MX8 TBGA QDP
Categorysemiconductor    Memory IC    NOR flash memory   
File Size200KB,11 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance
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MT35XU02GCBA1G12-0SIT Overview

NOR FlashSPI FLASH NOR SLC 256MX8 TBGA QDP

MT35XU02GCBA1G12-0SIT Parametric

Parameter NameAttribute value
MakerMicron
Product CategoryNOR flash memory
seriesMT35X
EncapsulationTray
Factory packaging quantity1122
Preliminary
Xccela™ Flash Memory Data Sheet Brief
Features
Xccela™ Flash Memory Data Sheet Brief
MT35X 1.8/3V, Octal I/O, 4KB/32KB/128KB Sector Erase
Features
• SPI-compatible Xccela™ bus interface
– Octal DDR protocol
– Extended-SPI protocol with octal commands
• Single and double transfer rate (SDR/DDR)
• Clock frequency:
– 166 MHz (MAX) in SDR (166 MB/s) (1.8V)
– 200 MHz (MAX) in DDR (400 MB/s) with DQS
(1.8V)
– 133 MHz (MAX) in SDR (133 MB/s) (3.0V)
– 133 MHz (MAX) in DDR (266MB/s) with DQS
(3.0V)
• Execute-in-place (XIP)
• PROGRAM/ERASE SUSPEND operations
• Volatile and nonvolatile configuration settings
• Software reset
• Reset pin available
• 3-byte and 4-byte address modes – enable memory
access beyond 128Mb
• Dedicated 64-byte OTP area outside main memory
– Readable and user-lockable
– Permanent lock with PROGRAM OTP command
• Erase capability
– Bulk erase for monolithic, die erase for stacked
devices
– Sector erase 128KB uniform granularity
– Subsector erase 4KB, 32KB granularity
• Security and write protection
– Volatile and nonvolatile locking and software
write protection for each 128KB sector
– Nonvolatile configuration locking and password
protection
– Protection management register offering en-
hanced security features
– Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
• Electronic signature
– JEDEC-standard 3-byte signature
– Extended device ID: two additional bytes identify
device factory options
• JESD47I-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)
Options
• Voltage
– 1.7–2.0V
– 2.7–3.6V
• Density
– 256Mb
– 512Mb
– 1Gb
– 2Gb
• Device stacking
– Monolithic
– 2 die stacked
– 4 die stacked
• Device Generation
• Die revision
• Configuration
– Boot in SDR x1
– Boot in DDR x8
• Sector Size
– 128KB
• Packages: JEDEC-standard, RoHS-com-
pliant
– 24-ball T-PBGA 05/6mm x 8mm
(5 x 5 array)
• Security features
– Standard security
• Special options
– Standard
– Automotive
• Operating temperature range
– From –40°C to +85°C
– From –40°C to +105°C
– From –40°C to +125°C
Marking
U
L
256
512
01G
02G
A
B
C
B
A
1
2
G
12
0
S
A
IT
AT
UT
CCMTD-1718347970-10442
Xccela_summary– Rev. A 04/18
1
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2018 Micron Technology, Inc. All rights reserved.
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