BUZ78-E3044 datasheet, PDF - EEWORLD Datasheet

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BUZ78-E3044: DescriptionPower Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN; CategoryThe transistor; File Size155KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BUZ78-E3044 Overview

Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN

BUZ78-E3044 Parametric

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G3
Contacts	3
Reach Compliance Code	unknown
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	170 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (ID)	1.5 A
Maximum drain-source on-resistance	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	6 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BUZ78-E3044 Related Products

	BUZ78-E3044	BUZ78-E3045	BUZ78-E3046
Description	Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN	Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Maker	Infineon	Infineon	Infineon
Parts packaging code	TO-220AB	TO-220AB	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G3	SMALL OUTLINE, R-PSSO-G2	TO-220AB, 3 PIN
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
Is Samacsys	N	N	N
Avalanche Energy Efficiency Rating (Eas)	170 mJ	170 mJ	170 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V	800 V	800 V
Maximum drain current (ID)	1.5 A	1.5 A	1.5 A
Maximum drain-source on-resistance	8 Ω	8 Ω	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G3	R-PSSO-G2	R-PSIP-T3
Number of components	1	1	1
Number of terminals	3	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	6 A	6 A	6 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO
Terminal form	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
JESD-609 code	e3	e3	-
Terminal surface	MATTE TIN	MATTE TIN	-

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