Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Central Semiconductor |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 40 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 35 |
| JEDEC-95 code | TO-39 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.8 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 50 MHz |
| Maximum off time (toff) | 650 ns |
| Maximum opening time (tons) | 500 ns |
| Base Number Matches | 1 |
| BSV15-16 | BSV15-10 | BSV16-16 | BSV17-10 | |
|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Reach Compliance Code | not_compliant | unknown | unknown | not_compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 1 A | 1 A | 1 A | 1 A |
| Collector-emitter maximum voltage | 40 V | 40 V | 60 V | 80 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 35 | 25 | 35 | 25 |
| JEDEC-95 code | TO-39 | TO-39 | TO-39 | TO-39 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | PNP | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 0.8 W | 0.8 W | 0.8 W | 0.8 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 50 MHz | 50 MHz | 50 MHz | 50 MHz |
| Maximum off time (toff) | 650 ns | 650 ns | 650 ns | 650 ns |
| Maximum opening time (tons) | 500 ns | 500 ns | 500 ns | 500 ns |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | - |
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