MAT-04BY/883 datasheet, PDF - EEWORLD Datasheet

MAT-04BY/883: DescriptionTRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CERDIP-14, BIP General Purpose Small Signal; CategoryThe transistor; File Size407KB，12 Pages; ManufacturerADI; Websitehttps://www.analog.com

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MAT-04BY/883 Overview

TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CERDIP-14, BIP General Purpose Small Signal

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ADI
Parts packaging code	DIP
package instruction	CERDIP-14
Contacts	14
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	LOW NOISE
Maximum collector current (IC)	0.03 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	300
JESD-30 code	R-GDIP-T14
JESD-609 code	e0
Number of components	4
Number of terminals	14
Maximum operating temperature	125 °C
Package body material	CERAMIC, GLASS-SEALED
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
VCEsat-Max	0.06 V
Base Number Matches	1

	MAT-04BY/883	MAT-04AY/883
Description	TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CERDIP-14, BIP General Purpose Small Signal	TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CERDIP-14, BIP General Purpose Small Signal
Is it Rohs certified?	incompatible	incompatible
Maker	ADI	ADI
Parts packaging code	DIP	DIP
package instruction	CERDIP-14	CERDIP-14
Contacts	14	14
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.03 A	0.03 A
Collector-emitter maximum voltage	40 V	40 V
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	300	400
JESD-30 code	R-GDIP-T14	R-GDIP-T14
JESD-609 code	e0	e0
Number of components	4	4
Number of terminals	14	14
Maximum operating temperature	125 °C	125 °C
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz
VCEsat-Max	0.06 V	0.06 V

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