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MT49H16M16FM-4IT

Description
DDR DRAM, 16MX16, CMOS, PBGA144, 11 X 18.50 MM, MICRO, BGA-144
Categorystorage   
File Size1MB,40 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT49H16M16FM-4IT Overview

DDR DRAM, 16MX16, CMOS, PBGA144, 11 X 18.50 MM, MICRO, BGA-144

MT49H16M16FM-4IT Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeBGA
package instructionVBGA, BGA144,12X18,40/32
Contacts144
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
access modeMULTI BANK PAGE BURST
Other featuresAUTO REFRESH
Maximum clock frequency (fCLK)250 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B144
JESD-609 codee0
length18.5 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals144
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize16MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeVBGA
Encapsulate equivalent codeBGA144,12X18,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)235
power supply1.8,2.5 V
Certification statusNot Qualified
Maximum seat height0.93 mm
Continuous burst length2,4
Maximum slew rate0.616 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width11 mm
Base Number Matches1
256Mb: x16, x32 2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
Features
Reduced Latency DRAM (RLDRAM )
MT49H8M32 – 1 Meg x 32 x 8 banks
MT49H16M16 – 2 Meg x 16 x 8 banks
For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/
®
Features
• Organization: 8 Meg x 32, 16 Meg x 16 in 8 banks
• Cyclic bank addressing for maximum data
bandwidth
• Non multiplexed addresses
• Non interruptible sequential burst of two (2-bit
prefetch) and four (4-bit prefetch) DDR
• Up to 600 Mb/sec/pin data rate
• Programmable READ latency (RL) of 5-6
• Data valid signal (DVLD) activated as read data is
available
• Data mask signals (DM0/DM1) to mask first and
• second part of write data burst
• IEEE 1149.1 compliant JTAG boundary scan
• 2.5V VEXT, 1.8V V
DD
, 1.8V V
DD
Q I/O
• Pseudo-HSTL 1.8V I/O Supply
• Internal auto precharge
• Refresh requirements: 32ms at 95°C case
temperature (8K refresh for each bank, 64K refresh
command must be issued in total each 32ms)
• 144-pin, 11mm x 18.5mm µBGA/FBGA package
Figure 1:
144-Ball FBGA
Table 1:
Valid Part Numbers
Part Number
Description
8 Meg x 32
16 Meg x 16
MT49H8M32HU-xx
MT49H16M16HU-xx
Options
• Clock Cycle Timing
3.3ns (300 MHz)
4ns (250 MHz)
5ns (200 MHz)
• Configuration
8 Meg x 32 (1 Meg x 32 x 8 banks)
16 Meg x 16 (2 Meg x 16 x 8 banks)
• Operating temperature range
Commercial:0° to +95°C
Industrial: T
C
= –40°C to +95°C
T
A
= –40°C to 85°C
• Package
144-ball, µBGA
144-ball, µBGA (Pb-Free)
144-ball, FBGA
144-ball, FBGA (Pb-Free)
Marking
-33
-4
-5
MT49H8M32
MT49H16M16
None
IT
The Micron
®
256Mb reduced latency DRAM
(RLDRAM
®
) contains 8 banks x32Mb of memory
accessible with 32-bit or 16-bit I/Os in a double data
rate (DDR) form at where the data is provided and syn-
chronized with a differential echo clock signal.
RLDRAM does not require row/column address multi-
plexing and is optimized for fast random access and
high-speed bandwidth.
RLDRAM is designed for high bandwidth communica-
tion data storage—telecommunications, networking,
and cache applications, etc.
General Description
FM
BM
1
HU
HT
1
Notes: 1. Contact factory for availability.
pdf: 09005aef81121545/source: 09005aef810c0ffc
256Mbx16x32RLDRAM_1.fm - Rev H 9/06 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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