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BDX83C

Description
Transistor
CategoryThe transistor   
File Size213KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

BDX83C Overview

Transistor

BDX83C Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 1000(Min)@ I
C
= 5A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 45V(Min)- BDX83; 60V(Min)- BDX83A
80V(Min)- BDX83B; 100V(Min)- BDX83C
APPLICATIONS
·Power
switching
·Hammer
drivers
·Series
and shunt regulators
·Audio
amplifiers
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDX83/A/B/C
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
45
UNIT
BDX83
BDX83A
BDX83B
60
80
V
BDX83C
100
45
BDX83
BDX83A
BDX83B
60
80
V
BDX83C
100
5
10
15
250
125
200
-65~200
V
A
A
mA
W
V
EBO
I
C
I
CM
I
B
B
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.4
UNIT
℃/W
isc Website:www.iscsemi.cn

BDX83C Related Products

BDX83C BDX83A BDX83
Description Transistor Transistor Transistor
Reach Compliance Code unknown unknown unknown
Base Number Matches 1 1 1
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