INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 1000(Min)@ I
C
= 5A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 45V(Min)- BDX83; 60V(Min)- BDX83A
80V(Min)- BDX83B; 100V(Min)- BDX83C
APPLICATIONS
·Power
switching
·Hammer
drivers
·Series
and shunt regulators
·Audio
amplifiers
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDX83/A/B/C
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
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VALUE
45
UNIT
BDX83
BDX83A
BDX83B
60
80
V
BDX83C
100
45
BDX83
BDX83A
BDX83B
60
80
V
BDX83C
100
5
10
15
250
125
200
-65~200
V
A
A
mA
W
℃
℃
V
EBO
I
C
I
CM
I
B
B
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.4
UNIT
℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDX83
BDX83A
I
C
= 100mA; I
B
= 0
BDX83B
BDX83C
V
CE(
sat
)
V
BE(
on
)-1
V
BE(
on
)-2
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Base-Emitter On Voltage
I
C
= 5A; I
B
= 10mA
B
BDX83/A/B/C
CONDITIONS
MIN
45
60
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
80
100
2.0
2.8
4.5
0.5
3.0
0.5
3.0
0.5
3.0
0.5
3.0
V
V
V
I
C
= 5A; V
CE
= 3V
I
C
= 10A; V
CE
= 3V
I
CEV
Collector
Cutoff Current
I
CEO
Collector
Cutoff Current
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BDX83
V
CE
= 45V; V
BE
= -1.5V
V
CE
= 45V; V
BE
= -1.5V; T
C
= 150℃
V
CE
= 60V; V
BE
= -1.5V
V
CE
= 60V; V
BE
= -1.5V; T
C
= 150℃
V
CE
= 80V; V
BE
= -1.5V
V
CE
= 80V; V
BE
= -1.5V; T
C
= 150℃
BDX83A
BDX83B
BDX83C
V
CE
= 100V; V
BE
= -1.5V
V
CE
= 100V; V
BE
= -1.5V; T
C
= 150℃
B
mA
BDX83
V
CE
= 20V; I
B
=0
V
CE
= 30V; I
B
=0
B
BDX83A
BDX83B
BDX83C
1.0
V
CE
= 40V; I
B
=0
B
mA
V
CE
= 50V; I
B
=0
B
I
EBO
h
FE-1
h
FE-2
h
FE-3
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
V
EB
= 5V; I
C
=0
I
C
= 1A; V
CE
= 3V
I
C
= 5A; V
CE
= 3V
I
C
= 10A; V
CE
= 3V
750
1000
250
5.0
mA
isc Website:www.iscsemi.cn
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