CJD350 TR13 datasheet, PDF - EEWORLD Datasheet

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CJD350 TR13: DescriptionBipolar Transistor - Bipolar Junction Transistor (BJT) 300Vcbo 300Vceo 3.0Vebo 500mA 15W; Categorysemiconductor Discrete semiconductor The transistor Bipolar transistor - a bipolar junction transistor (BJT); File Size1MB，6 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CJD350 TR13 Overview

Bipolar Transistor - Bipolar Junction Transistor (BJT) 300Vcbo 300Vceo 3.0Vebo 500mA 15W

CJD350 TR13 Parametric

Parameter Name	Attribute value
Maker	Central Semiconductor
Product Category	Bipolar Transistor - Bipolar Junction Transistor (BJT)
technology	Si
Installation style	SMD/SMT
Package/box	DPAK-3
Transistor polarity	PNP
Configuration	Single
Collector-emitter maximum voltage VCEO	300 V
Collector-base voltage VCBO	300 V
Emitter-Base voltage VEBO	3 V
Collector-emitter saturation voltage	2.6 V
Maximum DC collector current	750 mA
Gain bandwidth product fT	10 MHz
Minimum operating temperature	- 65 C
Maximum operating temperature	+ 150 C
series	CJD350
DC current gain hFE maximum	240 at 50 mA, 10 V
Encapsulation	Reel
Collector continuous current	500 mA
DC collector/Base Gain hfe Min	30 at 50 mA, 10 V
Pd-power dissipation	15 W
Factory packaging quantity	2500

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CJD340 NPN

CJD350 PNP

w w w. c e n t r a l s e m i . c o m

SURFACE MOUNT SILICON

COMPLEMENTARY

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD340 and CJD350

are complementary silicon power transistors manufactured

in a surface mount package, and designed for high

voltage general purpose applications.

MARKING: FULL PART NUMBER

DPAK CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Power Dissipation

Power Dissipation (TA=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

VCEO

VEBO

ICM

TJ, Tstg

300

3.0

500

750

1.56

-65 to +150

8.33

80.1

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=300V

ICEO

VCE=300V

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

VEB=3.0V

IC=1.0mA

IC=100mA, IB=10mA (CJD340)

IC=100mA, IB=10mA (CJD350)

VCE=10V,

IC=1.0A (CJD340)

IC=1.0A (CJD350)

300

MAX

100

1.0

2.6

1.5

2.0

240

UNITS

μA

MHz

VCE=10V, IC=50mA

VCE=10V, IC=50mA, f=10MHz

R5 (11-June 2013)

CJD350 TR13 Related Products

	CJD350 TR13	CJD340 TR13
Description	Bipolar Transistor - Bipolar Junction Transistor (BJT) 300Vcbo 300Vceo 3.0Vebo 500mA 15W	Bipolar Transistor - Bipolar Junction Transistor (BJT) 300Vcbo 300Vceo 3.0Vebo 500mA 15W
Maker	Central Semiconductor	Central Semiconductor
Product Category	Bipolar Transistor - Bipolar Junction Transistor (BJT)	Bipolar Transistor - Bipolar Junction Transistor (BJT)
technology	Si	Si
Installation style	SMD/SMT	SMD/SMT
Package/box	DPAK-3	DPAK-3
Transistor polarity	PNP	NPN
Configuration	Single	Single
Collector-emitter maximum voltage VCEO	300 V	300 V
Collector-base voltage VCBO	300 V	300 V
Emitter-Base voltage VEBO	3 V	3 V
Collector-emitter saturation voltage	2.6 V	1 V
Maximum DC collector current	750 mA	750 mA
Gain bandwidth product fT	10 MHz	10 MHz
Minimum operating temperature	- 65 C	- 65 C
Maximum operating temperature	+ 150 C	+ 150 C
series	CJD350	CJD340
DC current gain hFE maximum	240 at 50 mA, 10 V	240 at 50 mA, 10 V
Encapsulation	Reel	Reel
Collector continuous current	500 mA	500 mA
DC collector/Base Gain hfe Min	30 at 50 mA, 10 V	30 at 50 mA, 10 V
Pd-power dissipation	15 W	15 W
Factory packaging quantity	2500	2500

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