Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| package instruction | IN-LINE, R-PSIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Maximum collector current (IC) | 10 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 5 |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 20 W |
| Maximum power dissipation(Abs) | 20 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 2 MHz |
| VCEsat-Max | 8 V |
| Base Number Matches | 1 |
| MJD2955-1 | MJD2955-T1 | |
|---|---|---|
| Description | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 |
| Maker | SAMSUNG | SAMSUNG |
| package instruction | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| ECCN code | EAR99 | EAR99 |
| Maximum collector current (IC) | 10 A | 10 A |
| Collector-emitter maximum voltage | 60 V | 60 V |
| Configuration | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 5 | 5 |
| JESD-30 code | R-PSIP-T3 | R-PSSO-G2 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 2 |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | SMALL OUTLINE |
| Polarity/channel type | PNP | PNP |
| Maximum power consumption environment | 20 W | 20 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | YES |
| Terminal form | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE |
| transistor applications | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON |
| Nominal transition frequency (fT) | 2 MHz | 2 MHz |
| VCEsat-Max | 8 V | 8 V |
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