W972GG6KB-18 datasheet, PDF - EEWORLD Datasheet

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W972GG6KB-18: DescriptionDynamic Random Access Memory 2G DDR2-1066, x16; Categorysemiconductor Memory IC Dynamic random access memory; File Size2MB，88 Pages; ManufacturerWinbond Electronics Corporation; Websitehttp://www.winbond.com.tw; Environmental Compliance

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Dynamic Random Access Memory 2G DDR2-1066, x16

W972GG6KB-18 Parametric

Parameter Name	Attribute value
Maker	Winbond Electronics Corporation
Product Category	dynamic random access memory
type	SDRAM - DDR2
Data bus width	16 bit
organize	128 M x 16
Package/box	WBGA-84
storage	2 Gbit
Supply voltage - max.	1.9 V
Supply voltage - min.	1.7 V
Supply current—max.	85 mA
Minimum operating temperature	0 C
Maximum operating temperature	+ 85 C
series	W972GG6KB
Encapsulation	Tray
Installation style	SMD/SMT
Factory packaging quantity	144

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W972GG6KB

16M



8 BANKS



16 BIT DDR2 SDRAM

Table of Contents-

8.1

8.2

GENERAL DESCRIPTION ................................................................................................................... 4

FEATURES ........................................................................................................................................... 4

ORDER INFORMATION ....................................................................................................................... 4

KEY PARAMETERS ............................................................................................................................. 5

BALL CONFIGURATION ...................................................................................................................... 6

BALL DESCRIPTION ............................................................................................................................ 7

BLOCK DIAGRAM ................................................................................................................................ 8

FUNCTIONAL DESCRIPTION .............................................................................................................. 9

Power-up and Initialization Sequence ................................................................................................... 9

Mode Register and Extended Mode Registers Operation ................................................................... 10

8.2.1

Mode Register Set Command (MRS)............................................................................... 10

8.2.2

Extend Mode Register Set Commands (EMRS) .............................................................. 11

8.2.2.1

Extend Mode Register Set Command (1), EMR (1) ................................................ 11

8.2.2.2

DLL Enable/Disable ................................................................................................ 12

8.2.2.3

Extend Mode Register Set Command (2), EMR (2) ................................................ 13

8.2.2.4

Extend Mode Register Set Command (3), EMR (3) ................................................ 14

8.2.3

Off-Chip Driver (OCD) Impedance Adjustment ................................................................ 15

8.2.3.1

Extended Mode Register for OCD Impedance Adjustment .................................... 16

8.2.3.2

OCD Impedance Adjust .......................................................................................... 16

8.2.3.3

Drive Mode ............................................................................................................. 17

8.2.4

On-Die Termination (ODT) ............................................................................................... 18

8.2.5

ODT related timings ......................................................................................................... 18

8.2.5.1

MRS command to ODT update delay ..................................................................... 18

Command Function ............................................................................................................................. 20

8.3.1

Bank Activate Command.................................................................................................. 20

8.3.2

Read Command ............................................................................................................... 21

8.3.3

Write Command ............................................................................................................... 21

8.3.4

Burst Read with Auto-precharge Command..................................................................... 21

8.3.5

Burst Write with Auto-precharge Command ..................................................................... 21

8.3.6

Precharge All Command .................................................................................................. 21

8.3.7

Self Refresh Entry Command .......................................................................................... 21

8.3.8

Self Refresh Exit Command ............................................................................................. 22

8.3.9

Refresh Command ........................................................................................................... 22

8.3.10

No-Operation Command .................................................................................................. 23

8.3.11

Device Deselect Command.............................................................................................. 23

Read and Write access modes ........................................................................................................... 23

8.4.1

8.4.1.1

Posted

CAS

................................................................................................................... 23

Examples of posted

CAS

operation ..................................................................... 23

8.3

8.4

8.5

8.6

8.4.2

Burst mode operation ....................................................................................................... 24

8.4.3

Burst read mode operation ............................................................................................... 25

8.4.4

Burst write mode operation .............................................................................................. 25

8.4.5

Write data mask ............................................................................................................... 26

Burst Interrupt ..................................................................................................................................... 26

Precharge operation............................................................................................................................ 27

Publication Release Date: Feb. 13, 2017

Revision: A03

-1-

W972GG6KB

8.6.1

Burst read operation followed by precharge ..................................................................... 27

8.6.2

Burst write operation followed by precharge .................................................................... 27

8.7

Auto-precharge operation ................................................................................................................... 27

8.7.1

Burst read with Auto-precharge ....................................................................................... 28

8.7.2

Burst write with Auto-precharge ....................................................................................... 28

8.8

Refresh Operation ............................................................................................................................... 29

8.9

Power Down Mode .............................................................................................................................. 29

8.9.1

Power Down Entry ........................................................................................................... 30

8.9.2

Power Down Exit .............................................................................................................. 30

8.10 Input clock frequency change during precharge power down ............................................................. 30

9.1

9.2

9.3

9.4

9.5

10.

OPERATION MODE ........................................................................................................................... 31

Command Truth Table ........................................................................................................................ 31

Clock Enable (CKE) Truth Table for Synchronous Transitions ........................................................... 32

Data Mask (DM) Truth Table ............................................................................................................... 32

Function Truth Table ........................................................................................................................... 33

Simplified Stated Diagram ................................................................................................................... 36

ELECTRICAL CHARACTERISTICS ................................................................................................... 37

10.1 Absolute Maximum Ratings ................................................................................................................ 37

10.2 Operating Temperature Condition ....................................................................................................... 37

10.3 Recommended DC Operating Conditions ........................................................................................... 37

10.4 ODT DC Electrical Characteristics ...................................................................................................... 38

10.5 Input DC Logic Level ........................................................................................................................... 38

10.6 Input AC Logic Level ........................................................................................................................... 38

10.7 Capacitance ........................................................................................................................................ 39

10.8 Leakage and Output Buffer Characteristics ........................................................................................ 39

10.9 DC Characteristics .............................................................................................................................. 40

10.10

IDD Measurement Test Parameters .......................................................................................... 42

10.11

AC Characteristics ..................................................................................................................... 43

10.11.1

AC Characteristics and Operating Condition for -18 speed grade ................................... 43

10.11.2

AC Characteristics and Operating Condition for -25/25I/-3/-3I speed grade .................... 45

10.12

AC Input Test Conditions ........................................................................................................... 66

10.13

Differential Input/Output AC Logic Levels .................................................................................. 66

10.14

AC Overshoot / Undershoot Specification ................................................................................. 67

10.14.1

AC Overshoot / Undershoot Specification for Address and Control Pins: ........................ 67

10.14.2

AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask pins: .......... 67

11.1

11.2

11.3

11.4

11.5

11.6

11.7

11.8

11.9

11.10

11.11

11.12

11.13

11.14

TIMING WAVEFORMS ....................................................................................................................... 68

Command Input Timing ....................................................................................................................... 68

ODT Timing for Active/Standby Mode ................................................................................................. 69

ODT Timing for Power Down Mode .................................................................................................... 69

ODT Timing mode switch at entering power down mode .................................................................... 70

ODT Timing mode switch at exiting power down mode ...................................................................... 71

Data output (read) timing .................................................................................................................... 72

Burst read operation: RL=5 (AL=2, CL=3, BL=4) ................................................................................ 72

Data input (write) timing ...................................................................................................................... 73

Burst write operation: RL=5 (AL=2, CL=3, WL=4, BL=4) .................................................................... 73

Seamless burst read operation: RL = 5 (AL = 2, and CL = 3, BL = 4) ....................................... 74

Seamless burst write operation: RL = 5 (WL = 4, BL = 4).......................................................... 74

Burst read interrupt timing: RL =3 (CL=3, AL=0, BL=8) ............................................................. 75

Burst write interrupt timing: RL=3 (CL=3, AL=0, WL=2, BL=8) .................................................. 75

Write operation with Data Mask: WL=3, AL=0, BL=4) ............................................................... 76

11.

Publication Release Date: Feb. 13, 2017

Revision: A03

-2-

W972GG6KB

11.15

Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=4, tRTP ≤ 2clks) ............ 77

11.16

Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=8, tRTP ≤ 2clks) ............ 77

11.17

Burst read operation followed by precharge: RL=5 (AL=2, CL=3, BL=4, tRTP ≤ 2clks) ............ 78

11.18

Burst read operation followed by precharge: RL=6 (AL=2, CL=4, BL=4, tRTP ≤ 2clks) ............ 78

11.19

Burst read operation followed by precharge: RL=4 (AL=0, CL=4, BL=8, tRTP > 2clks) ............ 79

11.20

Burst write operation followed by precharge: WL = (RL-1) = 3 .................................................. 79

11.21

Burst write operation followed by precharge: WL = (RL-1) = 4 .................................................. 80

11.22

Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=8, tRTP ≤ 2clks) ............... 80

11.23

Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=4, tRTP > 2clks) ............... 81

11.24

Burst read with Auto-precharge followed by an activation to the same bank (tRC Limit): RL=5

(AL=2, CL=3, internal tRCD=3, BL=4, tRTP ≤ 2clks) ....................................................................................... 81

11.25

Burst read with Auto-precharge followed by an activation to the same bank (tRP Limit): RL=5

(AL=2, CL=3, internal tRCD=3, BL=4, tRTP ≤ 2clks) ....................................................................................... 82

11.26

Burst write with Auto-precharge (tRC Limit): WL=2, WR=2, BL=4, tRP=3 ................................. 82

11.27

Burst write with Auto-precharge (WR + tRP Limit): WL=4, WR=2, BL=4, tRP=3 ....................... 83

11.28

Self Refresh Timing ................................................................................................................... 83

11.29

Basic Power Down Entry and Exit Timing.................................................................................. 84

11.30

Precharged Power Down Entry and Exit Timing ........................................................................ 84

11.31

Clock frequency change in precharge Power Down mode ........................................................ 85

12.

13.

PACKAGE SPECIFICATION .............................................................................................................. 86

REVISION HISTORY .......................................................................................................................... 87

Publication Release Date: Feb. 13, 2017

Revision: A03

-3-

W972GG6KB-18 Related Products

	W972GG6KB-18	W972GG6KB-18 TR	W972GG6KB25I	W972GG6KB-25 TR
Description	Dynamic Random Access Memory 2G DDR2-1066, x16	Dynamic Random Access Memory 2G DDR2-1066, x16 T&R	Dynamic Random Access Memory 2G DDR2-800, x16, Ind Temp	Dynamic Random Access Memory 2G DDR2-800, x16 T&R
Maker	Winbond Electronics Corporation	Winbond Electronics Corporation	Winbond Electronics Corporation	Winbond Electronics Corporation
Product Category	dynamic random access memory	dynamic random access memory	dynamic random access memory	dynamic random access memory
type	SDRAM - DDR2	SDRAM - DDR2	SDRAM - DDR2	SDRAM - DDR2
Data bus width	16 bit	16 bit	16 bit	16 bit
organize	128 M x 16	128 M x 16	128 M x 16	128 M x 16
Package/box	WBGA-84	WBGA-84	WBGA-84	WBGA-84
storage	2 Gbit	2 Gbit	2 Gbit	2 Gbit
Supply voltage - max.	1.9 V	1.9 V	1.9 V	1.9 V
Supply voltage - min.	1.7 V	1.7 V	1.7 V	1.7 V
Supply current—max.	85 mA	85 mA	80 mA	80 mA
Minimum operating temperature	0 C	0 C	- 40 C	0 C
Maximum operating temperature	+ 85 C	+ 85 C	+ 95 C	+ 85 C
series	W972GG6KB	W972GG6KB	W972GG6KB	W972GG6KB
Encapsulation	Tray	Reel	Tray	Reel
Installation style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
Factory packaging quantity	144	2000	144	2000

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