W632GG8MB
32M
8 BANKS
8 BIT DDR3 SDRAM
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
8.
8.1
8.2
GENERAL DESCRIPTION ................................................................................................................... 5
FEATURES ........................................................................................................................................... 5
ORDER INFORMATION ....................................................................................................................... 6
KEY PARAMETERS ............................................................................................................................. 7
BALL CONFIGURATION ...................................................................................................................... 8
BALL DESCRIPTION ............................................................................................................................ 9
BLOCK DIAGRAM .............................................................................................................................. 11
FUNCTIONAL DESCRIPTION ............................................................................................................ 12
Basic Functionality .............................................................................................................................. 12
RESET and Initialization Procedure .................................................................................................... 12
8.2.1
Power-up Initialization Sequence ..................................................................................... 12
8.2.2
Reset Initialization with Stable Power .............................................................................. 14
Programming the Mode Registers....................................................................................................... 15
8.3.1
Mode Register MR0 ......................................................................................................... 17
8.3.1.1
Burst Length, Type and Order ................................................................................ 17
8.3.1.2
CAS Latency........................................................................................................... 18
8.3.1.3
Test Mode............................................................................................................... 18
8.3.1.4
DLL Reset............................................................................................................... 18
8.3.1.5
Write Recovery ....................................................................................................... 19
8.3.1.6
Precharge PD DLL ................................................................................................. 19
8.3.2
Mode Register MR1 ......................................................................................................... 19
8.3.2.1
DLL Enable/Disable ................................................................................................ 20
8.3.2.2
Output Driver Impedance Control ........................................................................... 20
8.3.2.3
ODT RTT Values .................................................................................................... 20
8.3.2.4
Additive Latency (AL) ............................................................................................. 20
8.3.2.5
Write leveling .......................................................................................................... 20
8.3.2.6
Output Disable ........................................................................................................ 21
8.3.2.7
TDQS, TDQS# ........................................................................................................ 21
8.3.3
Mode Register MR2 ......................................................................................................... 22
8.3.3.1
Partial Array Self Refresh (PASR) .......................................................................... 23
8.3.3.2
CAS Write Latency (CWL) ...................................................................................... 23
8.3.3.3
Auto Self Refresh (ASR) and Self Refresh Temperature (SRT) ............................. 23
8.3.3.4
Dynamic ODT (Rtt_WR) ......................................................................................... 23
8.3.4
Mode Register MR3 ......................................................................................................... 24
8.3.4.1
Multi Purpose Register (MPR) ................................................................................ 24
No OPeration (NOP) Command .......................................................................................................... 25
Deselect Command............................................................................................................................. 25
DLL-off Mode ...................................................................................................................................... 25
DLL on/off switching procedure ........................................................................................................... 26
8.7.1
DLL “on” to DLL “off” Procedure ....................................................................................... 26
8.7.2
DLL “off” to DLL “on” Procedure ....................................................................................... 27
Input clock frequency change ............................................................................................................. 28
8.8.1
Frequency change during Self-Refresh............................................................................ 28
8.8.2
Frequency change during Precharge Power-down .......................................................... 28
Write Leveling ..................................................................................................................................... 30
8.3
8.4
8.5
8.6
8.7
8.8
8.9
Publication Release Date: Nov. 22, 2017
Revision: A02
-1-
W632GG8MB
8.9.1
DRAM setting for write leveling & DRAM termination function in that mode .................... 31
8.9.2
Write Leveling Procedure ................................................................................................. 31
8.9.3
Write Leveling Mode Exit ................................................................................................. 33
Multi Purpose Register ........................................................................................................................ 34
8.10.1
MPR Functional Description ............................................................................................. 35
8.10.2
MPR Register Address Definition ..................................................................................... 36
8.10.3
Relevant Timing Parameters ............................................................................................ 36
8.10.4
Protocol Example ............................................................................................................. 36
ACTIVE Command.............................................................................................................................. 42
PRECHARGE Command .................................................................................................................... 42
READ Operation ................................................................................................................................. 43
8.13.1
READ Burst Operation ..................................................................................................... 43
8.13.2
READ Timing Definitions .................................................................................................. 44
8.13.2.1
READ Timing; Clock to Data Strobe relationship.................................................... 45
8.13.2.2
READ Timing; Data Strobe to Data relationship ..................................................... 46
8.13.2.3
tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Calculation ............................................. 47
8.13.2.4
tRPRE Calculation .................................................................................................. 48
8.13.2.5
tRPST Calculation .................................................................................................. 48
8.13.2.6
Burst Read Operation followed by a Precharge...................................................... 54
WRITE Operation ................................................................................................................................ 56
8.14.1
DDR3 Burst Operation ..................................................................................................... 56
8.14.2
WRITE Timing Violations ................................................................................................. 56
8.14.2.1
Motivation ............................................................................................................... 56
8.14.2.2
Data Setup and Hold Violations .............................................................................. 56
8.14.2.3
Strobe to Strobe and Strobe to Clock Violations..................................................... 56
8.14.2.4
Write Timing Parameters ........................................................................................ 56
8.14.3
Write Data Mask............................................................................................................... 57
8.14.4
tWPRE Calculation........................................................................................................... 58
8.14.5
tWPST Calculation ........................................................................................................... 58
Refresh Command .............................................................................................................................. 65
Self-Refresh Operation ....................................................................................................................... 67
Power-Down Modes ............................................................................................................................ 69
8.17.1
Power-Down Entry and Exit ............................................................................................. 69
8.17.2
Power-Down clarifications - Case 1 ................................................................................. 75
8.17.3
Power-Down clarifications - Case 2 ................................................................................. 75
8.17.4
Power-Down clarifications - Case 3 ................................................................................. 76
ZQ Calibration Commands .................................................................................................................. 77
8.18.1
ZQ Calibration Description ............................................................................................... 77
8.18.2
ZQ Calibration Timing ...................................................................................................... 78
8.18.3
ZQ External Resistor Value, Tolerance, and Capacitive loading ...................................... 78
On-Die Termination (ODT) .................................................................................................................. 79
8.19.1
ODT Mode Register and ODT Truth Table ...................................................................... 79
8.19.2
Synchronous ODT Mode .................................................................................................. 80
8.19.2.1
ODT Latency and Posted ODT ............................................................................... 80
8.19.2.2
Timing Parameters ................................................................................................. 80
8.19.2.3
ODT during Reads .................................................................................................. 82
8.19.3
Dynamic ODT .................................................................................................................. 83
8.19.3.1
Functional Description: ........................................................................................... 83
8.19.3.2
ODT Timing Diagrams ............................................................................................ 84
8.10
8.11
8.12
8.13
8.14
8.15
8.16
8.17
8.18
8.19
Publication Release Date: Nov. 22, 2017
Revision: A02
-2-
W632GG8MB
8.19.4
Asynchronous ODT Mode ................................................................................................ 88
8.19.4.1
Synchronous to Asynchronous ODT Mode Transitions .......................................... 89
8.19.4.2
Synchronous to Asynchronous ODT Mode Transition during Power-Down Entry .. 89
8.19.4.3
Asynchronous to Synchronous ODT Mode Transition during Power-Down Exit..... 92
8.19.4.4
Asynchronous to Synchronous ODT Mode during short CKE high and short CKE
low periods
93
9.
9.1
9.2
9.3
10.
OPERATION MODE ........................................................................................................................... 94
Command Truth Table ........................................................................................................................ 94
CKE Truth Table ................................................................................................................................. 96
Simplified State Diagram ..................................................................................................................... 97
ELECTRICAL CHARACTERISTICS ................................................................................................... 98
10.1 Absolute Maximum Ratings ................................................................................................................ 98
10.2 Operating Temperature Condition ....................................................................................................... 98
10.3 DC & AC Operating Conditions ........................................................................................................... 98
10.3.1
Recommended DC Operating Conditions ........................................................................ 98
10.4 Input and Output Leakage Currents .................................................................................................... 99
10.5 Interface Test Conditions .................................................................................................................... 99
10.6 DC and AC Input Measurement Levels ............................................................................................. 100
10.6.1
DC and AC Input Levels for Single-Ended Command and Address Signals .................. 100
10.6.2
DC and AC Input Levels for Single-Ended Data Signals ................................................ 101
10.6.3
Differential swing requirements for clock (CK - CK#) and strobe (DQS - DQS#) ........... 103
10.6.4
Single-ended requirements for differential signals ......................................................... 104
10.6.5
Differential Input Cross Point Voltage ............................................................................ 105
10.6.6
Slew Rate Definitions for Single-Ended Input Signals .................................................... 106
10.6.7
Slew Rate Definitions for Differential Input Signals ........................................................ 106
10.7 DC and AC Output Measurement Levels .......................................................................................... 107
10.7.1
Output Slew Rate Definition and Requirements ............................................................. 107
10.7.1.1
Single Ended Output Slew Rate ........................................................................... 108
10.7.1.2
Differential Output Slew Rate ............................................................................... 109
10.8 34 ohm Output Driver DC Electrical Characteristics.......................................................................... 110
10.8.1
Output Driver Temperature and Voltage sensitivity ........................................................ 112
10.9 On-Die Termination (ODT) Levels and Characteristics ..................................................................... 113
10.9.1
ODT Levels and I-V Characteristics ............................................................................... 113
10.9.2
ODT DC Electrical Characteristics ................................................................................. 114
10.9.3
ODT Temperature and Voltage sensitivity ..................................................................... 114
10.9.4
Design guide lines for RTT
PU
and RTT
PD
....................................................................... 115
10.10
ODT Timing Definitions............................................................................................................ 116
10.10.1
Test Load for ODT Timings ............................................................................................ 116
10.10.2
ODT Timing Definitions .................................................................................................. 116
10.11
Input/Output Capacitance ........................................................................................................ 120
10.12
Overshoot and Undershoot Specifications............................................................................... 121
10.12.1
AC Overshoot /Undershoot Specification for Address and Control Pins: ....................... 121
10.12.2
AC Overshoot /Undershoot Specification for Clock, Data, Strobe and Mask pins: ......... 121
10.13
IDD and IDDQ Specification Parameters and Test Conditions ................................................ 122
10.13.1
IDD and IDDQ Measurement Conditions ....................................................................... 122
10.13.2
IDD Current Specifications ............................................................................................. 132
10.14
Clock Specification .................................................................................................................. 133
10.15
Speed Bins .............................................................................................................................. 134
10.15.1
DDR3-1333 Speed Bin and Operating Conditions ......................................................... 134
10.15.2
DDR3-1600 Speed Bin and Operating Conditions ......................................................... 135
Publication Release Date: Nov. 22, 2017
Revision: A02
-3-
W632GG8MB
DDR3-1866 Speed Bin and Operating Conditions ......................................................... 136
DDR3-2133 Speed Bin and Operating Conditions ......................................................... 137
Speed Bin General Notes .............................................................................................. 138
10.16
AC Characteristics ................................................................................................................... 139
10.16.1
AC Timing and Operating Condition for -09/09I/09J/-11/11I/11J speed grades ............. 139
10.16.2
AC Timing and Operating Condition for -12/12I/12J/-15/15I/15J speed grades ............. 143
10.16.3
Timing Parameter Notes ................................................................................................ 147
10.16.4
Address / Command Setup, Hold and Derating ............................................................. 150
10.16.5
Data Setup, Hold and Slew Rate Derating ..................................................................... 157
11.
12.
PACKAGE SPECIFICATION ............................................................................................................ 159
REVISION HISTORY ........................................................................................................................ 160
10.15.3
10.15.4
10.15.5
Publication Release Date: Nov. 22, 2017
Revision: A02
-4-
W632GG8MB
1. GENERAL DESCRIPTION
The W632GG8MB is a 2G bits DDR3 SDRAM, organized as 33,554,432 words
8 banks
8 bits.
This device achieves high speed transfer rates up to 2133 MT/s (DDR3-2133) for various applications.
This device is sorted into the following speed grades: -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J,
12J and 15J.
The -09 ,09I and 09J speed grades are compliant to the DDR3-2133 (14-14-14) specification (The 09I
industrial grade which is guaranteed to support -40°C ≤ T
CASE
≤ 95°C, the 09J industrial plus grade
which is guaranteed to support -40°C ≤ T
CASE
≤ 105°C).
The -11 ,11I and 11J speed grades are compliant to the DDR3-1866 (13-13-13) specification (The 11I
industrial grade which is guaranteed to support -40°C ≤ T
CASE
≤ 95°C, the 11J industrial plus grade
which is guaranteed to support -40°C ≤ T
CASE
≤ 105°C).
The -12, 12I and 12J speed grades are compliant to the DDR3-1600 (11-11-11) specification (The 12I
industrial grade which is guaranteed to support -40°C ≤ T
CASE
≤ 95°C, the 12J industrial plus grade
which is guaranteed to support -40°C ≤ T
CASE
≤ 105°C).
The -15, 15I and 15J speed grades are compliant to the DDR3-1333 (9-9-9) specification (The 15I
industrial grade which is guaranteed to support -40°C ≤ T
CASE
≤ 95°C, the 15J industrial plus grade
which is guaranteed to support -40°C ≤ T
CASE
≤ 105°C).
The W632GG8MB is designed to comply with the following key DDR3 SDRAM features such as
posted CAS#, programmable CAS# Write Latency (CWL), ZQ calibration, on die termination and
asynchronous reset. All of the control and address inputs are synchronized with a pair of e xternally
supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and
CK# falling). All I/Os are synchronized with a differential DQS-DQS# pair in a source synchronous
fashion.
2. FEATURES
Power Supply: V
DD
, V
DDQ
= 1.5V ± 0.075V
Double Data Rate architecture: two data transfers per clock cycle
Eight internal banks for concurrent operation
8 bit prefetch architecture
CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14
Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On-
The-Fly (OTF)
Programmable read burst ordering: interleaved or nibble sequential
Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
Edge-aligned with read data and center-aligned with write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge, data and data mask are referenced to both edges of
a differential data strobe pair (double data rate)
Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command,
address and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Auto-precharge operation for read and write bursts
Publication Release Date: Nov. 22, 2017
Revision: A02
-5-
DSP and ARM Processors
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