DMP3018SFVQ-13 datasheet, PDF - EEWORLD Datasheet

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DMP3018SFVQ-13: DescriptionMOSFET MOSFET BVDSS: 25V-30V; Categorysemiconductor Discrete semiconductor The transistor MOSFET; File Size453KB，8 Pages; ManufacturerDiodes Incorporated

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DMP3018SFVQ-13 Overview

MOSFET MOSFET BVDSS: 25V-30V

DMP3018SFVQ-13 Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Product Category	MOSFET
technology	Si
Installation style	SMD/SMT
Package/box	PowerDI3333-8
Number of channels	1 Channel
Transistor polarity	P-Channel
Vds - drain-source breakdown voltage	30 V
Id-continuous drain current	35 A
Rds On - drain-source on-resistance	12 mOhms
Vgs th-gate-source threshold voltage	3 V
Vgs - gate-source voltage	25 V
Qg-gate charge	51 nC
Minimum operating temperature	- 55 C
Maximum operating temperature	+ 150 C
Pd-power dissipation	30 W
Configuration	Single
channel mode	Enhancement
qualifications	AEC-Q101
Encapsulation	Cut Tape
Encapsulation	Reel
Fall time	42.8 ns
Rise Time	19.9 ns
Factory packaging quantity	3000
Typical shutdown delay time	57.5 ns
Typical switch-on delay time	7.8 ns
unit weight	30 mg

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DMP3018SFVQ

30V P-CHANNEL ENHANCEMENT MODE MOSFET

PowerDI3333-8 (Type UX)

Product Summary

DSS

DS(ON)

Max

12mΩ @ V

= -10V

21mΩ @ V

= -4.5V

Max

= +25°

-35A

-25A

Features and Benefits



100% Unclamped Inductive Switching (Test in Production) –

Ensures More Reliable and Robust End Application

Low R

DS(ON)

– ensures on-state losses are minimized

Small form factor thermally efficient package enables higher

density end products

Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

PPAP Capable (Note 4)

ADVANCED INFORMATION

-30V

Description

This MOSFET is designed to minimize the on-state resistance

DS(ON)

) and yet maintain superior switching performance, making it

ideal for high-efficiency power management applications.

Mechanical Data

Applications



Backlighting

Power Management Functions

DC-DC Converters



Case: PowerDI 3333-8 (Type UX)

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See Diagram

Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.03 grams (Approximate)

Pin1

S G

ESD PROTECTED

Top View

D D

Bottom View

Gate Protection

Diode

Equivalent Circuit

Ordering Information

(Note 5)

Part Number

DMP3018SFVQ-7

DMP3018SFVQ-13

Notes:

Case

PowerDI3333-8 (Type UX)

Packaging

2,000/Tape & Reel

3,000/Tape & Reel

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

YYWW

V18

V18 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 18 = 2018)

WW = Week Code (01 to 53)

PowerDI is a registered trademark of Diodes Incorporated.

DMP3018SFVQ

Document number: DS40798 Rev. 2 - 2

1 of 7

www.diodes.com

April 2018

DMP3018SFVQ-13 Related Products

	DMP3018SFVQ-13	DMP3018SFVQ-7
Description	MOSFET MOSFET BVDSS: 25V-30V	MOSFET MOSFET BVDSS: 25V-30V
Maker	Diodes Incorporated	Diodes Incorporated
Product Category	MOSFET	MOSFET
technology	Si	Si
Installation style	SMD/SMT	SMD/SMT
Package/box	PowerDI3333-8	PowerDI3333-8
Number of channels	1 Channel	1 Channel
Transistor polarity	P-Channel	P-Channel
Vds - drain-source breakdown voltage	30 V	30 V
Id-continuous drain current	35 A	35 A
Rds On - drain-source on-resistance	12 mOhms	12 mOhms
Vgs th-gate-source threshold voltage	3 V	3 V
Vgs - gate-source voltage	25 V	25 V
Qg-gate charge	51 nC	51 nC
Minimum operating temperature	- 55 C	- 55 C
Maximum operating temperature	+ 150 C	+ 150 C
Pd-power dissipation	30 W	30 W
Configuration	Single	Single
channel mode	Enhancement	Enhancement
qualifications	AEC-Q101	AEC-Q101
Fall time	42.8 ns	42.8 ns
Rise Time	19.9 ns	19.9 ns
Factory packaging quantity	3000	2000
Typical shutdown delay time	57.5 ns	57.5 ns
Typical switch-on delay time	7.8 ns	7.8 ns
unit weight	30 mg	30 mg
Encapsulation	Reel	Reel

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