Operating Temperature Range ....................... -40°C to +85°C
Junction Temperature Range ..........................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Information
PACKAGE TYPE: 40-PIN TQFN
Package Code
Outline Number
Land Pattern Number
T4066M+1
21-0177
90-0085
For the latest package outline information and land patterns (footprints), go to
www.maximintegrated.com/packages.
Note that a “+”,
“#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
Electrical Characteristics 1
(Circuit of Figure 1, V
IN
= 12V, V
DD
= V
CC
= V
EN
= 5V, REFIN = ILIM = REF,
SKIP
= GND.
T
A
= 0°C to +85°C,
unless otherwise
specified. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
PWM CONTROLLER
Input Voltage Range
Quiescent Supply Current (V
DD
)
Shutdown Supply Current (V
DD
)
V
CC
Undervoltage Lockout
Threshold
V
DD
-to-V
CC
Resistance
On-Time
Minimum Off-Time
TON Shutdown Supply Current
REFIN Voltage Range
V
REFIN
V
IN
I
DD
+ I
CC
I
SHDN
V
UVLO(VCC)
R
CC
t
ON
t
OFF(MIN)
V
IN
= 12V,
V
FB
= 1.0V
(Note 3)
(Note 3)
EN = GND, V
TON
= 26V,
V
CC
= 0V or 5V, T
A
= +25°C
(Note 2)
0
R
TON
= 97.5kΩ (600kHz)
R
TON
= 200kΩ (300kHz)
R
TON
= 302.5kΩ (200kHz)
123
275
379
FB forced above REFIN
EN = GND, T
A
= +25°C
Rising edge, PWM disabled below this
level; hysteresis = 100mV
3.95
4.5
0.7
0.1
4.2
20
164
303
442
225
0.01
205
331
505
350
1
V
REF
ns
µA
V
26.0
1.2
2
4.45
V
mA
µA
V
Ω
ns
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
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Maxim Integrated
│
2
MAX15035
15A Step-Down Regulator with Internal Switches
Electrical Characteristics 1 (continued)
(Circuit of Figure 1, V
IN
= 12V, V
DD
= V
CC
= V
EN
= 5V, REFIN = ILIM = REF,
SKIP
= GND.
T
A
= 0°C to +85°C,
unless otherwise
specified. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
REFIN Input Current
FB Voltage Range
SYMBOL
I
REFIN
V
FB
(Note 2)
V
REFIN
= 0.5V,
T = +25°C
measured at FB,
A
V
IN
= 4.5V to
26V,
SKIP
=
T
A
= 0°C to +85°C
V
DD
V
REFIN
= 1.0V
V
REFIN
= 2.0V
FB Input Bias Current
FB Output Low Voltage
Load-Regulation Error
Line-Regulation Error
Soft-Start/Soft-Stop Slew Rate
Dynamic REFIN Slew Rate
REFERENCE
Reference Voltage
FAULT DETECTION
V
REF
V
CC
= 4.5V
to 5.5V
No load
I
REF
= -10µA to +50µA
1.990
1.98
2.00
2.010
2.02
V
SS
SR
DYN
SR
I
FB
I
SINK
= 3mA
SKIP
= V
DD
V
CC
= 4.5V to 5.5V, V
IN
= 4.5V to 26V
Rising/falling edge on EN
Rising edge on REFIN
0.4
3
0.1
0.2
1.2
9.45
2.2
18
T
A
= +25°C
T
A
= 0°C to +85°C
T
A
= 0°C to +85°C
CONDITIONS
T
A
= +25°C, REFIN = 0.5V to 2V
MIN
-50
0
0.495
0.493
0.995
0.993
1.990
-0.1
2.0
1.0
0.5
TYP
MAX
+50
V
REF
0.505
0.507
1.005
1.007
2.010
+0.1
0.4
µA
V
%
%
mV/µs
mV/µs
UNITS
nA
V
FB Voltage Accuracy
V
FB
V
V
FB
= 0.5V to 2.0V, T
A
= +25°C
Output Overvoltage-Protection
Trip Threshold
OVP
With respect to the internal target voltage
(error comparator threshold); rising edge;
hysteresis = 50mV
Dynamic transition
Minimum OVP threshold
250
300
V
REF
+
0.30
0.7
5
350
mV
V
µs
-160
350
mV
µs
µs
350
0.4
1
V
µA
Output Overvoltage
Fault-Propagation Delay
Output Undervoltage-Protection
Trip Threshold
Output Undervoltage
Fault-Propagation Delay
PGOOD Propagation Delay
PGOOD Output-Low Voltage
PGOOD Leakage Current
t
OVP
UVP
t
UVP
t
PGOOD
FB forced 25mV above trip threshold
With respect to the internal target voltage
(error comparator threshold) falling edge;
hysteresis = 50mV
FB forced 25mV below trip threshold
UVP falling edge, 25mV overdrive
OVP rising edge, 25mV overdrive
Startup delay
I
SINK
= 3mA
FB = REFIN (PGOOD high impedance),
PGOOD forced to 5V, T
A
= +25°C
100
-240
100
-200
200
5
5
200
I
PGOOD
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Maxim Integrated
│
3
MAX15035
15A Step-Down Regulator with Internal Switches
Electrical Characteristics 1 (continued)
(Circuit of Figure 1, V
IN
= 12V, V
DD
= V
CC
= V
EN
= 5V, REFIN = ILIM = REF,
SKIP
= GND.
T
A
= 0°C to +85°C,
unless otherwise
specified. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Dynamic REFIN Transition
Fault Blanking Threshold
Thermal-Shutdown Threshold
CURRENT LIMIT
ILIM Input Range
ILIM Input Bias Current
Current-Limit Threshold
Current-Limit Threshold
(Negative)
Current-Limit Threshold
(Zero Crossing)
Ultrasonic Frequency
Ultrasonic Current-Limit
Threshold
Internal BST Switch
On-Resistance
INPUTS AND OUTPUTS
EN Logic-Input Threshold
EN Logic-Input Current
V
EN
I
EN
EN rising edge, hysteresis = 450mV (typ)
EN forced to GND or V
DD
, T
A
= +25°C
High (5V V
DD
)
SKIP
Quad-Level Input Logic
Levels
V
SKIP
Open (3.3V)
Ref (2.0V)
Low (GND)
SKIP
Logic-Input Current
I
SKIP
SKIP
forced to GND or V
DD
, T
A
= +25°C
-2
1.20
-0.5
V
CC
-
0.4
3.0
1.7
3.6
2.3
0.4
+2
µA
V
1.7
2.20
+0.5
V
µA
R
BST
V
ILIMIT
V
INEG
V
ZX
T
A
= +25°C, ILIM = 0.4V to 2V
V
ILIM
= 0.4V, V
GND
- V
LX
V
ILIM
= 0.4V, V
GND
- V
LX
V
ILIM
= 0.4V,
V
GND
- V
LX
,
SKIP
= GND or open
SKIP
= open (3.3V); V
FB
= V
REFIN
+ 50mV
SKIP
= open (3.3V); V
FB
= V
REFIN
+ 50mV,
V
GND
- V
LX
I
BST
= 10mA, V
DD
= 5V
18
ILIM = REF (2.0V), V
GND
- V
LX
T
SHDN
SYMBOL
CONDITIONS
Fault blanking initiated; REFIN deviation
from the internal target voltage (error
comparator threshold); hysteresis = 10mV
Temperature rising, hysteresis = 15°C
0.4
-0.1
18
92
20
100
-24
1
30
-35
4
7
MIN
TYP
±50
160
V
REF
+0.1
22
108
MAX
UNITS
mV
°C
V
µA
mV
mV
mV
kHz
mV
Ω
Electrical Characteristics 2
PARAMETER
PWM CONTROLLER
Input Voltage Range
Quiescent Supply Current (V
DD
)
On-Time
Minimum Off-Time
REFIN Voltage Range
(Circuit of Figure 1, V
IN
= 12V, V
DD
= V
CC
= V
EN
= 5V, REFIN = ILIM = REF,
SKIP
= GND.
T
A
= -40°C to +85°C,
unless otherwise
specified.) (Note 1)
SYMBOL
V
IN
CONDITIONS
MIN
4.5
FB forced above REFIN
V
IN
= 12V,
V
FB
= 1.0V
(Note 3)
(Note 3)
(Note 2)
R
TON
= 97.5kΩ (600kHz)
R
TON
= 200kΩ (300kHz)
R
TON
= 302.5kΩ (200kHz)
115
270
368
0
MAX
26
1.2
213
336
516
400
V
REF
ns
V
ns
UNITS
V
mA
I
DD
+ I
CC
t
ON
t
OFF(MIN)
V
REFIN
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Maxim Integrated
│
4
MAX15035
15A Step-Down Regulator with Internal Switches
Electrical Characteristics 2 (continued)
FB Voltage Range
FB Voltage Accuracy
PARAMETER
REFERENCE
Reference Voltage
FAULT DETECTION
Output Overvoltage-Protection
Trip Threshold
Output Undervoltage-Protection
Trip Threshold
Output Undervoltage
Fault-Propagation Delay
PGOOD Output-Low Voltage
V
CC
Undervoltage Lockout
Threshold
CURRENT LIMIT
ILIM Input Range
Current-Limit Threshold
Ultrasonic Frequency
INPUTS AND OUTPUTS
EN Logic-Input Threshold
VEN
V
ILIMIT
V
UVLO(VCC)
V
REF
V
FB
V
FB
SYMBOL
(Note 2)
(Circuit of Figure 1, V
IN
= 12V, V
DD
= V
CC
= V
EN
= 5V, REFIN = ILIM = REF,
SKIP
= GND.
T
A
= -40°C to +85°C,
unless otherwise
specified.) (Note 1)
0
0.49
0.99
1.985
MIN
1.985
Measured at FB, V
REFIN
= 0.5V
V
IN
= 4.5V to
V
REFIN
= 1.0V
26V,
SKIP
= V
DD
V
REFIN
= 2.0V
CONDITIONS
V
REF
0.51
1.01
2.015
MAX
2.015
UNITS
V
V
V
V
DD
= 4.5V to 5.5V
With respect to the internal target voltage
(error comparator threshold) rising edge;
hysteresis = 50mV
With respect to the internal target voltage
(error comparator threshold);
falling edge; hysteresis = 50mV
FB forced 25mV below trip threshold
I
SINK
= 3mA
Rising edge, PWM disabled below this level,
hysteresis = 100mV
OVP
250
350
mV
UVP
t
UVP
-240
80
-160
400
0.4
mV
µs
V
V
V
mV
kHz
3.95
0.4
4.45
V
REF
23
110
V
ILIM
= 0.4V, V
GND
= V
LX
17
90
17
1.20
V
CC
-
0.4
3.0
1.7
ILIM = REF (2.0V), V
GND
- V
LX
SKIP
= open (3.3V), V
FB
= V
REFIN
+ 50mV
EN rising edge hysteresis = 450mV (typ)
High (5V V
DD
)
2.20
V
SKIP
Quad-Level Input
Logic Levels
V
SKIP
Mid (3.3V)
Ref (2.0V)
Low (GND)
3.6
2.3
0.4
V
Note 1:
Limits are 100% production tested at T
A
= +25°C. Maximum and minimum limits over temperature are guaranteed by
design and characterization.
Note 2:
The 0 to 0.5V range is guaranteed by design, not production tested.
Note 3:
On-time and off-time specifications are measured from 50% point to 50% point at the unloaded LX node. The typical 25ns
dead time that occurs between the high-side driver falling edge (high-side MOSFET turn-off) and the low-side MOSFET
turnon) is included in the on-time measurement. Similarly, the typical 25ns dead time that occurs between the low-side
driver falling edge (low-side MOSFET turn-off) and the high-side driver rising edge (high-side MOSFET turn-on) is included
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