QPA4563C
®
50 MHz – 4000 MHz Active Bias Cascadable SiGe HBT
Amplifier
General Description
RFMD’s QPA4563C is a high performance SiGe HBT
MMIC amplifier utilizing a Darlington configuration with a
patented active bias network. The active bias network
provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply,
the QPA4563C does not require a dropping resistor as
compared to typical Darlington amplifiers. The QPA4563C
is designed for high linearity 3V gain block applications that
require small size and minimal external components. It is
internally matched to 50 Ω.
6 Lead SOT-363 Package
Product Features
•
Single Fixed 3V Supply
•
No Dropping Resistor Required
•
Patented Self-Bias Circuitry
•
P1dB=+15.2dBm at 1950MHz
•
OIP3=+27.8dBm at 1950MHz
•
Robust 2000V ESD, Class 2 HBM
Functional Block Diagram
Applications
•
•
•
•
Instrumentation
Repeaters
Boosters
PA Driver Amplifier
•
Cellular, PCS, GSM, UMTS
•
IF Amplifier
•
Wireless Data, Satellite
Top View
Ordering Information
Part No.
QPA4563CTR7
QPA4563CSQ
QPA4563CSR
Description
3000 pieces on a 7” reel (standard)
25 Piece Sample Bag
100 Pieces on 7” Reel
QPA4563CPCK401 850 MHz, EVB with 5 Piece Sample Bag
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QPA4563C
®
50 MHz – 4000 MHz Active Bias Cascadable SiGe HBT Amplifier
Absolute Maximum Ratings
Parameter
Storage Temp
Device Voltage (V
D
)
Device Current (I
D
)
RF Input Power
(1)
Rating
−55 to +150 °C
+4 V
110 mA
+12 dBm
Recommended Operating Conditions
Parameter
Min
Operating Temperature
−40
Junction Temperature (T
J
)
Device Operating Voltage
Typ
Max
+105
+125
Units
°C
°C
V
+3.0
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Notes:
1. Z
L
to 10:1 VSWR
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Parameter
Small Signal Gain
Conditions
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
1950 MHz
1950 MHz
Min
20.0
17.5
Typ
23.6
21.1
19.8
+15.8
+15.2
+14.6
+29.0
+27.8
+26.6
16.3
15.4
2.5
48
126
4.0
60
Max
Units
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
mA
°C/W
Output Power at 1dB Compression
+13.0
Output Third Intercept Point
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Current
Thermal Resistance, θjc
+25.0
Notes:
1. Test conditions unless otherwise noted: V
S
= +3 V, I
D
= 48 mA Typ., OIP3 Tone Spacing=1 MHz, P
OUT
per tone = 0 dBm, 50 Ω system,
Temp = +25 °C
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QPA4563C
®
50 MHz – 4000 MHz Active Bias Cascadable SiGe HBT Amplifier
Evaluation Board and Schematic – 850 MHz Application Circuit
Bill of Material – 850 MHz Application Circuit
Reference
n/a
C1
C2
C3
C4, C5
R1
L1
J1, J2
U1
J3, J4
Value
n/a
1 uF
1000 pF
68 pF
100 pF
0Ω
33 nH
n/a
n/a
n/a
Description
PCB, QPA4563C
CAP, 10%, 25V, X7R, 1206
CAP, 10%, 50V, X7R, 0402
CAP, 5%, 50V, C0G, 0402
CAP, 5%, 50V, C0G, 0402
RES, 0 Ω, 1210
IND, 5%, M/L, 0603
CONN, SMA, EL, FLT, 0.068" SPE-000318
HBT MMIC Amplifier
CONN, HDR, ST, 1x2, 0.100", Hi-temp, T/H
Manufacturer
Qorvo
Murata Electronics
Murata Electronics
Murata Electronics
Murata Electronics
KOA Speer Electronics
Murata Electronics
Amphenol RF Asia Corp
Qorvo
Samtec Inc
Part Number
QPAXX63X-410(A)
GRM31MR71E105KA01L
GRM155R71H102KA01D
GRM1555C1H680JA01D
GRM1555C1H101JA01D
RK73Z2ETTD
LL1608-FSL33NJ
901-10426
QPA4563C
HTSW-102-07-G-S
Component Values for Specific Frequencies
Frequency
C4, C5
C3
L1
500 MHz
220 pF
100 pF
68 nH
850 MHz
100 pF
68 pF
33 nH
1950 MHz
68 pF
22 pF
22 nH
2400 MHz
56 pF
22 pF
18 nH
3500 MHz
39 pF
15 pF
15 nH
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QPA4563C
®
50 MHz – 4000 MHz Active Bias Cascadable SiGe HBT Amplifier
Typical Performance
– 850 MHz Application Circuit
Parameter
Frequency
Small Signal Gain
Output Third Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
500
23.7
+28.6
+16.2
17.2
13.5
26.5
2.3
850
23.6
+29.0
+15.8
17.2
21.3
26.7
2.2
Typical Value
1950
21.1
+27.8
+15.2
16.3
15.4
25.7
2.5
2400
19.8
+26.6
+14.6
15.8
13.8
24.9
2.7
3500
16.9
+24.8
+13.8
13.8
14.6
23.0
3.3
Units
MHz
dB
dBm
dBm
dB
dB
dB
dB
Notes:
1. Test conditions: V
S
= +3 V, I
D
= 48 mA Typ., OIP3 Tone Spacing=1 MHz, P
OUT
per tone = 0 dBm, 50 Ω system, Temp = +25 °C
Performance Plots – 850 MHz Application Circuit
Test conditions unless otherwise noted: V
S
= +3.0 V, I
D
= 48 mA, Temp.= +25 °C
30
|S21| vs. Frequency
0
|S11| vs. Frequency
0
-5
-10
|S22| vs. Frequency
25
+105°C
+85°C
+25°C
−40°C
-5
|S21| (dB)
20
-10
|S22| (dB)
|S11| (dB)
-15
+105°C
15
-15
+105°C
+85°C
+25°C
−40°C
-20
-25
-30
+85°C
+25°C
−40°C
10
-20
5
0
1000
2000
3000
4000
5000
-25
0
1000
2000
3000
4000
5000
0
1000
2000
3000
4000
5000
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
-10
|S12| vs. Frequency
33
OIP3 vs Frequency
18
OP1dB vs Frequency
30
16
-15
OP1dB (dBm)
OIP3 (dBm)
|S12| (dB)
+105°C
27
14
+105°C
+85°C
+25°C
−40°C
-20
+85°C
+25°C
−40°C
24
+105°C
+85°C
+25°C
12
-25
21
−40°C
10
-30
0
1000
2000
3000
4000
5000
18
500
1000
1500
2000
2500
3000
3500
8
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
6
Noise Figure vs Frequency
0.08
0.07
Current vs Voltage
5
Noise Figure (dB)
+105°C
+85°C
0.06
0.05
4
−40°C
ID (A)
+25°C
0.04
+105°C
+85°C
+25°C
−40°C
3
0.03
0.02
2
0.01
1
0
1000
2000
3000
4000
0.00
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (MHz)
VS (V)
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QPA4563C
®
50 MHz – 4000 MHz Active Bias Cascadable SiGe HBT Amplifier
Pin Configuration and Description
Top View
Pad No.
1, 2, 4, 5
3
6
Label
GND
RF
IN
RF
OUT
Description
Connection to ground. Use via holes in PCB for best performance to reduce lead inductance as close to
ground leads as possible
RF Input Pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of
operation.
RF Output and Bias Pin. DC voltage is present on this pin, therefore a DC blocking capacitor is
necessary for proper operation.
Package Marking
Trace Code - XXXX
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