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MT40A512M16JY-083E AIT:B

Description
Dynamic Random Access Memory DDR4 8G 512MX16 FBGA
Categorysemiconductor    Memory IC    Dynamic random access memory   
File Size12MB,381 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance
Download Datasheet Parametric View All

MT40A512M16JY-083E AIT:B Overview

Dynamic Random Access Memory DDR4 8G 512MX16 FBGA

MT40A512M16JY-083E AIT:B Parametric

Parameter NameAttribute value
MakerMicron
Product Categorydynamic random access memory
Package/boxFBGA-96
seriesMT40A
EncapsulationTray
Installation styleSMD/SMT
Factory packaging quantity1368
8Gb: x8, x16 Automotive DDR4 SDRAM
Features
Automotive DDR4 SDRAM
MT40A1G8
MT40A512M16
Features
V
DD
= V
DDQ
= 1.2V ±60mV
V
PP
= 2.5V –125mV/+250mV
On-die, internal, adjustable V
REFDQ
generation
1.2V pseudo open-drain I/O
Refresh time of 8192-cycle at T
C
temperature range:
– 64ms at –40°C to 85°C
– 32ms at 85°C to 95°C
– 16ms at 95°C to 105°C
– 8ms at 105°C to 125°C
16 internal banks (x8): 4 groups of 4 banks each
8 internal banks (x16): 2 groups of 4 banks each
8n-bit prefetch architecture
Programmable data strobe preambles
Data strobe preamble training
Command/Address latency (CAL)
Multipurpose register read and write capability
Write leveling
Self refresh mode
Low-power auto self refresh (LPASR)
Temperature controlled refresh (TCR)
Fine granularity refresh
Self refresh abort
Maximum power saving
Output driver calibration
Nominal, park, and dynamic on-die termination
(ODT)
Data bus inversion (DBI) for data bus
Command/Address (CA) parity
Databus write cyclic redundancy check (CRC)
Per-DRAM addressability
Connectivity test
JEDEC JESD-79-4 compliant
sPPR and hPPR capability
AEC-Q100
PPAP submission
Options
1
• Configuration
– 1 Gig x 8
– 512 Meg x 16
• 78-ball FBGA package (Pb-free) – x8
– 8mm x 12mm – Rev. B
7.5mm x 11mm – Rev. E
• 96-ball FBGA package (Pb-free) – x16
– 8mm x 14mm – Rev. B
– 7.5mm x 13.5mm – Rev. E
• Timing – cycle time
– 0.625ns @ CL = 22 (DDR4-3200)
– 0.750ns @ CL = 18 (DDR4-2666)
– 0.833ns @ CL = 16 (DDR4-2400)
• Product certification
– Automotive
• Operating temperature
– Industrial (–40° T
C
95°C)
– Automotive (–40° T
C
105°C)
– Ultra-high (–40° T
C
125°C)
3
– Revision
Notes:
Marking
1G8
512M16
WE
SA
JY
LY
-062E
-075E
-083E
A
IT
AT
UT
:B, :E
1. Not all options listed can be combined to
define an offered product. Use the part
catalog search on
http://www.micron.com
for available offerings.
2. The ×4 device is not offered and the mode
is not supported by the x8 or x16 device
even though some ×4 mode descriptions ex-
ist in the datasheet.
3. The UT option use based on automotive us-
age model. Contact Micron sales represen-
tative if you have questions.
4. -062E is only available for die Rev. E.
5. The datasheet is preliminary revision for die
Rev. E.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. F 01/19 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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