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MA45291

Description
Variable Capacitance Diode, S Band, 1.2pF C(T), 90V, Silicon, Abrupt,
CategoryDiscrete semiconductor    diode   
File Size340KB,5 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric View All

MA45291 Overview

Variable Capacitance Diode, S Band, 1.2pF C(T), 90V, Silicon, Abrupt,

MA45291 Parametric

Parameter NameAttribute value
MakerMACOM
package instructionO-CEMW-N2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW LEAKAGE
Minimum breakdown voltage90 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio6.5
Nominal diode capacitance1.2 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandS BAND
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Maximum power dissipation0.2 W
Certification statusNot Qualified
minimum quality factor1200
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT
RA45200 Series
Silicon
Abrupt Junction
runing Varactors
Features
30
U
HIGH 0
LOW LEAKAGE
AVAILABLE IN CHIP FORM
AVAILABLE IN CERAMiC PACKAGES
CUSTOM DESIGNS AVAiLABLE
LOW POST TUNING DRIFT
FREQUENCY RANGE VHF
Ku-BAND
• CAN BE SCREENED TO TX, TXV
SPECIFICATIONS
Description
Fhe MA45200 series of silicon abrupt junction tuning
iaractors has been designed to obtain the highest Q
~ossible.Each- device in this series has a high density
silicon dioxide passivation which results in exceptionally
ow leakage currents and low post tuning drift. These
silicon abrupt junction tuning varactors, which have a high
Q, also exhibit large capacitance changes with bias
oltages. The capacitance change is approximately equal
to the square root of the voltage. The MA45200 series
diodes are available in a number of ceramic packages as
well as in chip form.
Applications
The MA45200 series of silicon tuning diodes is ideally
suited for frequency tuning applications through Ku band.
These devices are designed for use in solid state elec-
tronic tuning of transistor, Gunn and IMPATT oscillators.
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