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PSMN8R7-100YSFX

Description
MOSFET PSMN8R7-100YSF SOT669/LFPAK
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size288KB,16 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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MOSFET PSMN8R7-100YSF SOT669/LFPAK

PSMN8R7-100YSFX Parametric

Parameter NameAttribute value
MakerNexperia
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxLFPAK56-4
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage100 V
Id-continuous drain current90 A
Rds On - drain-source on-resistance9 mOhms
Vgs th-gate-source threshold voltage2 V
Vgs - gate-source voltage20 V
Qg-gate charge38.5 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 175 C
Pd-power dissipation198 W
ConfigurationSingle
channel modeEnhancement
Transistor type1 N-Channel
Fall time12.7 ns
Rise Time11 ns
Factory packaging quantity1500
Typical shutdown delay time22.5 ns
Typical switch-on delay time12.5 ns
PSMN8R7-100YSF
1 November 2017
NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56
package
Product data sheet
1. General description
NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for
industrial & consumer applications.
2. Features and benefits
Low Q
rr
for higher efficiency and lower spiking
Qualified to 175 °C
Low Q
G
x R
DSon
FOM for high efficiency switching applications
Strong avalanche energy rating (E
as
)
Avalanche rated and 100% tested
Ha-free and RoHS compliant LFPAK56 package
Wave-solderable LFPAK56 package
3. Applications
Synchronous rectifier in AC-DC and DC-DC
BLDC motor control
USB-PD and mobile fast-charge adapters
LED lighting
Full-bridge and half-bridge applications
Flyback and resonant topologies
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 10
V
GS
= 10 V; I
D
= 25 A; T
j
= 100 °C;
Fig. 11
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
I
D
= 25 A; V
DS
= 50 V; V
GS
= 10 V;
Fig. 12; Fig. 13
-
-
7.5
38.5
-
-
nC
nC
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
Min
-
-
-
-55
-
-
Typ
-
-
-
-
7.2
10.7
Max
100
90
198
175
9
14
Unit
V
A
W
°C
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