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HYB3165160AT-60

Description
Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50
Categorystorage   
File Size217KB,26 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

HYB3165160AT-60 Overview

Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50

HYB3165160AT-60 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeTSOP2
package instruction0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50
Contacts50
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G50
JESD-609 codee0
length20.95 mm
memory density67108864 bit
Memory IC TypeFAST PAGE DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals50
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP50,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshNO
Maximum standby current0.0005 A
Maximum slew rate0.105 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1
4M x 16-Bit Dynamic RAM
( 8k, 4k & 2k Refresh)
HYB 3164160AT(L) -40/-50/-60
HYB 3165160AT(L) -40/-50/-60
HYB 3166160AT(L) -40/-50/-60
Advanced Information
4 194 304 words by 16-bit organization
0 to 70 °C operating temperature
Fast Page Mode operation
Performance:
-40
t
RAC
t
CAC
t
AA
t
RC
t
PC
RAS access time
CAS access time
Access time from address
Read/write cycle time
Fast page mode cycle time
40
10
20
75
30
-50
50
13
25
90
35
-60
60
15
30
110
40
ns
ns
ns
ns
ns
Single + 3.3 V (± 0.3V) power supply
Low power dissipation:
-40
HYB3166160AT(L)
HYB3165160AT(L)
HYB3164160AT(L)
900
756
612
-50
558
468
378
-60
396
324
270
mW
mW
mW
7.2 mW standby (TTL)
3.24 mW standby (MOS)
720
µW
standby for L-version
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh (L-version only)
2 CAS / 1 WE byte control
8192 refresh cycles /128 ms , 13 R/ 9C addresses (HYB 3164160AT)
4096 refresh cycles / 64 ms , 12 R/ 10C addresses (HYB 3165160AT)
2048 refresh cycles / 32 ms , 11 R/ 11C addresses (HYB 3166160AT)
256 msec refresh period for L-versions
Plastic Package:
P-TSOPII-50 400 mil
Semiconductor Group
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