BZV55C30/TR datasheet, PDF - EEWORLD Datasheet

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BZV55C30/TR: DescriptionZener diode; CategoryDiscrete semiconductor diode; File Size36KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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BZV55C30/TR Overview

Zener diode

BZV55C30/TR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
Reach Compliance Code	unknown
Diode type	ZENER DIODE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED

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• ZENER DIODES

•LEADLESS PACKAGE FOR SURFACE MOUNT

• DOUBLE PLUG CONSTRUCTION

• METALLURGICALLY BONDED

BZV55 C2V4

thru

BZV55 C75

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Power Derating: 3.33 mW / °C above +50°C

Forward Voltage: @ 200mA: 1.1 Volts maximum

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise specified.

MAXIMUM

DIFFERENTIAL

RESISTANCE

rdiff @ I Z

OHMS

100

130

150

170

180

200

215

240

255

.700

.500

.200

.100

.050

MAXIMUM

REVERSE

CURRENT

IR @ VR

TYPE

ZENER VOLTAGE

(NOTE 1)

VZ @ I ZT

VOLTS

MIN

MAX

VOLTS

10.5

11.2

12.6

14.0

15.4

16.8

18.9

21.0

23.1

25.2

27.3

30.1

32.9

35.7

39.2

43.4

47.6

52.2

BZV55

C2V4

C2V7

C3V0

C3V3

C3V6

C3V9

C4V3

C4V7

C5V1

C5V6

C6V2

C6V8

C7V5

C8V2

C9V1

C10

C11

C12

C13

C15

C16

C18

C20

C22

C24

C27

C30

C33

C36

C39

C43

C47

C51

C56

C62

2.2

2.5

2.8

3.1

3.4

3.7

4.0

4.4

4.8

5.2

5.8

6.4

7.0

7.7

8.5

9.4

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

28.0

31.0

34.0

37.0

40.0

44.0

48.0

52.0

58.0

64.0

70.0

2.6

2.9

3.2

3.5

3.8

4.1

4.6

5.0

5.4

6.0

6.6

7.2

7.9

8.7

9.6

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

28.9

32.0

35.0

38.0

41.0

46.0

50.0

54.0

60.0

66.0

72.0

79.0

MILLIMETERS

INCHES

DIM MIN MAX MIN MAX

1.60

1.70 0.063 0.067

0.41

0.55 0.016 0.022

3.30

3.70 .130 .146

2.54 REF.

.100 REF.

0.03 MIN.

.001 MIN.

DESIGN DATA

CASE:

DO-213AA, Hermetically sealed

glass case. (MELF, SOD-80, LL34)

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE: (R

OJEC):

100 ÞC/W maximum at L = 0 inch

THERMAL IMPEDANCE: (Z

OJX): 35

ÞC/W maximum

POLARITY:

Diode to be operated with

the banded (cathode) end positive.

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) Of this Device is Approximately

+6PPM/°C. The COE of the Mounting

Surface System Should Be Selected To

Provide A Suitable Match With This

Device.

BZV55 C68

BZV55 C75

NOTE 1

Nominal Zener voltage is measured with the device junction in thermal

equilibrium at an ambient temperature of 25°C + 3°C.

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

FAX (978) 689-0803

WEBSITE: http://www.microsemi.com

165

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