Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
R
DS(on)
() at V
GS
= 4.5 V
I
D
(A)
Configuration
Package
60
0.036
0.048
6
Dual
PowerPAK 1212-8W
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
1
D
2
G
1
G
2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current
a
Continuous source current (diode
Pulsed drain current
b
SYMBOL
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
conduction)
a
I
D
I
S
I
DM
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
temperature)
e, f
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
60
± 20
6
6
6
24
12
7.2
27.8
9.25
-55 to +175
260
UNIT
V
A
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
b
Operating junction and storage temperature range
Soldering recommendations (peak
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB
mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
94
5.4
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width
300 μs, duty cycle
2 %
c. When mounted on 1" square PCB (FR4 material)
d. Parametric verification ongoing
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S18-0339-Rev. A, 19-Mar-2018
Document Number: 75966
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS966ENW
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
Zero gate voltage drain current
I
DSS
V
GS
= 0 V
V
GS
= 0 V
On-state drain current
a
I
D(on)
V
GS
= 10 V
V
GS
= 10 V
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward transconductance
b
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
c
Gate-source charge
c
Gate-drain charge
c
Gate resistance
Turn-on delay time
c
Rise time
c
Turn-off delay time
c
Fall time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 24
I
D
1.25 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 30 V, I
D
= 1.25 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.5
-
-
-
-
440
190
15
6.2
1.4
0.8
0.9
7.9
1.7
14
4.8
572
247
20
8.8
-
-
1.5
11.9
2.6
19.5
7.2
ns
nC
pF
g
fs
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
5 V
I
D
= 1.25 A
I
D
= 1.25 A, T
J
= 125 °C
I
D
= 1.25 A, T
J
= 175 °C
I
D
= 1.25 A
60
1.5
-
-
-
-
13
-
-
-
-
-
-
2.0
-
-
-
-
-
0.028
-
-
0.036
2.8
-
2.5
± 100
1
50
150
-
0.036
0.055
0.066
0.048
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 6 A
Source-Drain Diode Ratings and Characteristic
b
Pulsed current
a
Forward voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery current
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
RM(REC)
I
F
= 1 A, di/dt = 100 A/μs
I
F
= 6 A, V
GS
= 0 V
-
-
-
-
-
-
-
-
0.82
22.7
20
12
11
-1.3
24
1.1
44
26
-
-
-1.95
A
V
ns
nC
ns
A
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0339-Rev. A, 19-Mar-2018
Document Number: 75966
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS966ENW
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
50
10000
10
Axis Title
10000
Vishay Siliconix
40
2nd line
I
D
- Drain Current (A)
2nd line
I
D
- Drain Current (A)
V
GS
= 10 V thru 6 V
V
GS
= 5 V
8
1000
1st line
2nd line
1000
1st line
2nd line
T
C
= 25 °C
30
6
20
100
10
4
100
2
T
C
= 125 °C
T
C
= -55 °C
0
0
3
6
9
12
15
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
50
10000
0.20
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
40
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
30
T
C
= 25 °C
0.16
1000
1st line
2nd line
V
GS
= 4.5 V
0.12
20
100
10
T
C
= 125 °C
T
C
= -55 °C
0.08
100
0.04
V
GS
= 10 V
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
0.00
0
6
12
18
24
30
I
D
- Drain Current (A)
2nd line
10
Transfer Characteristics
On-Resistance vs. Drain Current
Axis Title
800
10000
2nd line
V
GS
- Gate-to-Source Voltage (V)
10
I
D
= -100 A
V
DS
= -15 V
Axis Title
10000
2nd line
C - Capacitance (pF)
600
C
iss
8
1000
1st line
2nd line
1000
1st line
2nd line
100
2
10
0
40
80
120
160
200
Q
g
- Total Gate Charge (nC)
2nd line
6
400
C
oss
4
100
200
C
rss
0
0
15
30
45
60
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
Capacitance
Gate Charge
S18-0339-Rev. A, 19-Mar-2018
Document Number: 75966
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS966ENW
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
2.0
2nd line
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1.25 A
Vishay Siliconix
Axis Title
10000
100
10000
1.7
V
GS
= 10 V
10
1000
1st line
2nd line
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
1000
1st line
2nd line
100
10
1.4
1
1.1
V
GS
= 4.5 V
0.1
100
0.8
0.01
0.5
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
0.25
10000
0.5
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.20
2nd line
V
GS(th)
Variance (V)
1000
1st line
2nd line
0.15
T
J
= 150 °C
0.2
I
D
= 5 mA
1000
1st line
2nd line
100
-0.1
0.10
-0.4
I
D
= 250 μA
100
0.05
T
J
= 25 °C
-0.7
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
-1.0
-50 -25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
2nd line
10
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
80
2nd line
V
DS
- Drain-to-Source Voltage (V)
I
D
= 250 μA
Axis Title
10000
1000
I
DM
limited
10000
77
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
74
100
100 μs
1000
1st line
2nd line
10
I
D
limited
1 ms
10 ms
100 ms, 1 s, 10 s, DC
71
100
68
1
Limited by R
DS(on) (1)
100
0.1
T
C
= 25 °C
Single pulse
BVDSS limited
65
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
0.01
0.01
(1)
0.1
1
10
100
10
1000
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
S18-0339-Rev. A, 19-Mar-2018
Document Number: 75966
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?75966.
S18-0339-Rev. A, 19-Mar-2018
Document Number: 75966
5
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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