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1N6103AUS/TR

Description
ESD Suppressor/TVS Diode
CategoryCircuit protection    ESD suppressor/TVS diode   
File Size423KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

1N6103AUS/TR Overview

ESD Suppressor/TVS Diode

1N6103AUS/TR Parametric

Parameter NameAttribute value
MakerMicrosemi
Product CategoryESD Suppressor/TVS Diode
Shipping restrictionsMouser does not currently sell this product.
RoHSN
polarityBidirectional
Number of channels1 Channel
Termination typeSMD/SMT
Breakdown voltage7.13 V
Operating Voltage5.7 V
clamping voltage11.2 V
Ipp - peak pulse current44.6 A
Package/boxB-SQ-MELF-2
Pd-power dissipation2 W
Minimum operating temperature- 55 C
Maximum operating temperature+ 175 C
EncapsulationReel
Current rating50 uA
Factory packaging quantity100
1N6103AUS – 1N6137AUS
Voidless Hermetically Sealed Surface Mount
Bidirectional Transient Voltage Suppressors
Qualified to MIL-PRF-19500/516
Qualified Levels:
JAN, JANTX, JANTXV
and JANS*
Available on
commercial
versions
DESCRIPTION
This surface mount series of industry recognized voidless, hermetically sealed, bidirectional
Transient Voltage Suppressors (TVS) designs is military qualified to MIL-PRF-19500/516 and is
ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working
Peak “Standoff” Voltage selection from 5.7 to 152 Volts with a 500 W rating for a 10/1000
µs
pulse.
They are very robust in hard-glass construction and internal “Category
1”
metallurgical bonds.
These are also available as both a non-suffix part and an “A” version providing different voltage
tolerances as described in the nomenclature section. These devices are also available in axial-
leaded packages for thru-hole mounting.
“B” or SQ-MELF
Package
Also available in:
“B” Package
(axial-leaded)
1N6103 – 1N6137
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
Triple-layer passivation.
Internal “Category
1”
metallurgical bonds.
Voidless hermetically sealed glass package.
JAN, JANTX, and JANTXV qualified versions are available per MIL-PRF-19500/516.
*JANS available for 1N6103(A)US thru 1N6118(A)US per MIL-PRF-19500/516 as well as further
options for screening in reference to MIL-PRF-19500 for all others in this series.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
Military and other high-reliability applications.
Extremely robust construction.
Extensive range in working peak “standoff” voltage (V
WM
) from 5.7 to 152 volts.
500 watt peak pulse power (P
PP
) for a 10/1000
µs
pulse.
ESD and EFT protection per IEC6100-4-2 and IEC61000-4-4 respectively.
Protection from the secondary effects of lightning per select levels in IEC61000-4-5.
Square-end-cap terminals for easy placement.
Non-sensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
@
T
A
= 25 C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-End Cap
Peak Pulse Power @ 25 ºC (10/1000
µs)
o (1)
Steady-State Power up to T
EC
= 150 C
o (2)
Steady-State Power @ T
A
= 25 C
Impulse Repetition Rate
Solder Temperature @ 10 s
Notes:
1.
2.
o
Symbol
T
J
and T
STG
R
ӨJEC
P
PP
P
D
P
D
df
T
SP
Value
-55 to +175
8.3
500
3.0
2.0
0.01
260
Unit
o
C
C/W
W
W
W
%
o
C
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Linearly derate above T
EC
=150
o
C to zero at T
EC
=175
o
C.
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where maximum rated T
J
is not exceeded (also see
figure 4).
T4-LDS-0277-1, Rev. 1 (121354)
©2013 Microsemi Corporation
Page 1 of 6
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