FS45MR12W1M1_B11
EasyPACK™ModulmitCoolSiC™TrenchMOSFETundPressFIT/NTC
EasyPACK™modulewithCoolSiC™TrenchMOSFETandPressFIT/NTC
VorläufigeDaten/PreliminaryData
V
DSS
= 1200V
I
D nom
= 25A / I
DRM
= 50A
PotentielleAnwendungen
• AnwendungenmithohenSchaltfrequenzen
• DC/DCWandler
• Motorantriebe
• USV-Systeme
ElektrischeEigenschaften
• NiederinduktivesDesign
• NiedrigeSchaltverluste
MechanischeEigenschaften
• IntegrierterNTCTemperaturSensor
• PressFITVerbindungstechnik
•
Robuste Montage durch integrierte
Befestigungsklammern
PotentialApplications
• HighFrequencySwitchingapplication
• DC/DCconverter
• Motordrives
• UPSsystems
ElectricalFeatures
• Lowinductivedesign
• Lowswitchinglosses
MechanicalFeatures
• IntegratedNTCtemperaturesensor
• PressFITcontacttechnology
•
Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V2.0
2018-11-13
FS45MR12W1M1_B11
VorläufigeDaten
PreliminaryData
MOSFET/MOSFET
HöchstzulässigeWerte/MaximumRatedValues
Drain-Source-Spannung
Drain-sourcevoltage
Drain-Gleichstrom
DCdraincurrent
GepulsterDrainstrom
Pulseddraincurrent
Gate-SourceSpannung
Gate-sourcevoltage
T
vj
= 25°C
T
vj
= 175°C, V
GS
= 15 V
T
H
= 75°C
V
DSS
1200
25
50,0
-10 / 20
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
R
DS on
V
GS(th)
Q
G
R
Gint
C
iss
C
oss
C
rss
E
oss
T
vj
= 25°C
V
GS
= 20 V
V
GS
= -10 V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
t
P
≤
2 µs, T
vj
= 25°C
t
P
≤
2 µs, T
vj
= 150°C
I
DSS
I
GSS
t
d on
8,20
7,40
7,40
6,30
6,70
6,70
35,2
38,9
38,9
16,4
16,4
16,4
0,30
0,37
0,37
0,033
0,035
0,035
210
205
1,54
-40
150
3,45
typ.
45,0
59,0
66,0
4,50
0,062
4,0
1,84
0,11
0,014
44,0
0,10
120
400
max.
mΩ
5,55
V
µC
Ω
nF
nF
nF
µJ
µA
nA
ns
V
A
A
V
I
D nom
I
D pulse
V
GSS
verifiziertdurchDesign,t
p
limitiertdurchT
vjmax
verifiedbydesign,t
p
limitedbyT
vjmax
CharakteristischeWerte/CharacteristicValues
Einschaltwiderstand
Drain-sourceonresistance
Gate-Schwellenspannung
Gatethresholdvoltage
GesamtGateladung
Totalgatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Ausgangskapazität
Outputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
C
OSS
Speicherenergie
C
OSS
storedenergy
Drain-Source-Reststrom
Zerogatevoltagedraincurrent
Gate-Source-Reststrom
Gate-sourceleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turnondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turnoffdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
D
= 25 A
V
GS
= 15 V
I
D
=10,0mA,V
DS
=V
GS
,T
vj
=25°C
(testedafter1mspulseatV
GS
=+20V)
V
GS
= -5 V / 15 V, V
DS
= 600 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C
V
DS
= 800 V, V
GS
= 0 V, V
AC
= 25 mV
f = 1 MHz, T
vj
= 25°C
V
DS
= 800 V, V
GS
= 0 V, V
AC
= 25 mV
f = 1 MHz, T
vj
= 25°C
V
DS
= 800 V, V
GS
= 0 V, V
AC
= 25 mV
T
vj
= 25°C
V
DS
= 800 V, V
GS
= -5 V / 15 V
V
DS
= 1200 V, V
GS
= -5 V
V
DS
= 0 V
T
vj
= 25°C
I
D
= 25 A, V
DS
= 600 V
V
GS
= -5 V / 15 V
R
Gon
= 1,00
Ω
I
D
= 25 A, V
DS
= 600 V
V
GS
= -5 V / 15 V
R
Gon
= 1,00
Ω
I
D
= 25 A, V
DS
= 600 V
V
GS
= -5 V / 15 V
R
Goff
= 1,00
Ω
I
D
= 25 A, V
DS
= 600 V
V
GS
= -5 V / 15 V
R
Goff
= 1,00
Ω
I
D
= 25 A, V
DS
= 600 V, Lσ = 30 nH
di/dt = 5,20 kA/µs (T
vj
= 150°C)
V
GS
= -5 V / 15 V, R
Gon
= 1,00
Ω
I
D
= 25 A, V
DS
= 600 V, Lσ = 30 nH
du/dt = 41,6 kV/µs (T
vj
= 150°C)
V
GS
= -5 V / 15 V, R
Goff
= 1,00
Ω
V
GS
= -5 V / 15 V, V
DD
= 800 V
V
DSmax
= V
DSS
-L
sDS
·di/dt
R
G
= 10,0
Ω
proMOSFET/perMOSFET
t
r
ns
t
d off
ns
t
f
ns
E
on
mJ
E
off
mJ
A
A
K/W
°C
I
SC
R
thJH
T
vj op
BodyDiode/Bodydiode
HöchstzulässigeWerte/MaximumRatedValues
BodyDiode-Gleichstrom
DCbodydiodeforwardcurrent
T
vj
= 175°C, V
GS
= -5 V
T
H
= 75°C
I
SD
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
SD
8
typ.
4,60
4,35
4,30
max.
5,65
V
A
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
I
SD
= 25 A, V
GS
= -5 V
I
SD
= 25 A, V
GS
= -5 V
I
SD
= 25 A, V
GS
= -5 V
Datasheet
2
V2.0
2018-11-13
FS45MR12W1M1_B11
VorläufigeDaten
PreliminaryData
NTC-Widerstand/NTC-Thermistor
CharakteristischeWerte/CharacteristicValues
Nennwiderstand
Ratedresistance
AbweichungvonR100
DeviationofR100
Verlustleistung
Powerdissipation
B-Wert
B-value
B-Wert
B-value
B-Wert
B-value
T
NTC
= 25°C
T
NTC
= 100°C, R
100
= 493
Ω
T
NTC
= 25°C
R
2
= R
25
exp [B
25/50
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/80
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/100
(1/T
2
- 1/(298,15 K))]
R
25
∆R/R
P
25
B
25/50
B
25/80
B
25/100
3375
3411
3433
-5
min.
typ.
5,00
5
20,0
max.
kΩ
%
mW
K
K
K
AngabengemäßgültigerApplicationNote.
Specificationaccordingtothevalidapplicationnote.
Modul/Module
Isolations-Prüfspannung
Isolationtestvoltage
InnereIsolation
Internalisolation
Kriechstrecke
Creepagedistance
Luftstrecke
Clearance
VergleichszahlderKriechwegbildung
Comperativetrackingindex
RelativerTemperaturindex(elektr.)
RTIElec.
Modulstreuinduktivität
Strayinductancemodule
Lagertemperatur
Storagetemperature
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
Gewicht
Weight
Gehäuse
housing
RMS, f = 50 Hz, t = 1 min.
Basisisolierung(Schutzklasse1,EN61140)
basicinsulation(class1,IEC61140)
Kontakt-Kühlkörper/terminaltoheatsink
Kontakt-Kontakt/terminaltoterminal
Kontakt-Kühlkörper/terminaltoheatsink
Kontakt-Kontakt/terminaltoterminal
CTI
RTI
V
ISOL
min.
L
sCE
T
stg
F
G
-40
20
-
24
3,0
Al
2
O
3
11,5
6,3
10,0
5,0
> 200
140
typ.
18
125
50
max.
nH
°C
N
g
kV
mm
mm
°C
The current under continuous operation is limited to 25 A rms per connector pin.
Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design
guidlines described in Application Note AN 2018-09 must be considered to ensure sound operation of the device over the planned lifetime.
Datasheet
3
V2.0
2018-11-13
FS45MR12W1M1_B11
VorläufigeDaten
PreliminaryData
SichererRückwärts-ArbeitsbereichMOSFET(RBSOA)
reversebiassafeoperatingareaMOSFET(RBSOA)
I
D
=f(V
DS
)
V
GS
=-5V/15V,T
vj
=150°C,R
G
=1Ω
55
50
45
40
35
30
25
20
15
10
5
0
0,001
0,001
i:
1
2
3
4
r
i
[K/W]: 0,076
0,221
0,453 0,79
τ
i
[s]:
0,000603 0,00674 0,0363 0,161
TransienterWärmewiderstandMOSFET
transientthermalimpedanceMOSFET
Z
thJH
=f(t)
10
I
D
, Modul
I
D
, Chip
Z
th
: MOSFET
1
Z
thJH
[K/W]
0
200
400
600
800
V
DS
[V]
1000
1200
1400
I
D
[A]
0,1
0,01
0,01
0,1
t [s]
1
10
AusgangskennlinieMOSFET(typisch)
outputcharacteristicMOSFET(typical)
I
D
=f(V
DS
)
V
DS
=15V
50
45
40
35
30
I
D
[A]
25
20
15
10
5
0
T
Vj
= 25 °C
T
Vj
= 125 °C
T
Vj
= 150 °C
ÜbertragungscharakteristikMOSFET(typisch)
transfercharacteristicMOSFET(typical)
I
D
=f(V
GS
)
V
DS
=20V
50
T
vj
= 25 °C
45
40
35
30
I
D
[A]
25
20
15
10
5
0
0,0
0,5
1,0
1,5
2,0
V
DS
[V]
2,5
3,0
3,5
4,0
3
4
5
6
7
8
V
GS
[V]
9
10
11
12
Datasheet
4
V2.0
2018-11-13
FS45MR12W1M1_B11
VorläufigeDaten
PreliminaryData
SchaltzeitenMOSFET(typisch)
switchingtimesMOSFET(typical)
t
don
=f(I
D
),t
r
=f(I
D
),t
doff
=f(I
D
),t
f
=f(I
D
)
V
GS
=-5V/15V,R
Gon
=1Ω,R
Goff
=1Ω,V
DS
=600V,T
vj
=150°C
1
t
don
t
r
t
doff
t
f
SchaltzeitenMOSFET(typisch)
switchingtimesMOSFET(typical)
t
don
=f(R
G
),t
r
=f(R
G
),t
doff
=f(R
G
),t
f
=f(R
G
)
V
GS
=-5V/15V,I
D
=25A,V
DS
=600V,T
vj
=150°C
1
t
don
t
r
t
doff
t
f
0,1
0,1
t [µs]
0,01
t [µs]
0,01
0,001
0
5
10
15
20
25 30
I
D
[A]
35
40
45
50
0,001
0
1
2
3
4
5
6
R
G
[Ohm]
7
8
9
10
SchaltverlusteMOSFET(typisch)
switchinglossesMOSFET(typical)
E
on
=f(I
D
),E
off
=f(I
D
)
V
GS
=-5V/15V,R
Gon
=1Ω,R
Goff
=1Ω,V
DS
=600V
0,70
E
on
, T
vj
= 125°C, E
on
, T
vj
= 150°C,
E
off
, T
vj
= 125°C, E
off
, T
vj
= 150°C,
SchaltverlusteMOSFET(typisch)
switchinglossesMOSFET(typical)
E
on
=f(R
G
),E
off
=f(R
G
)
V
GS
=-5V/15V,I
D
=25A,V
DS
=600V
0,70
E
on
, T
vj
= 125°C, E
on
, T
vj
= 150°C
E
off
, T
vj
= 125°C, E
off
, T
vj
= 150°C
0,60
0,60
0,50
0,50
0,40
E [mJ]
E [mJ]
0,30
0,40
0,30
0,20
0,20
0,10
0,10
0,00
0
5
10
15
20
25 30
I
D
[A]
35
40
45
50
0,00
0
1
2
3
4
5
6
R
G
[Ω]
7
8
9
10
Datasheet
5
V2.0
2018-11-13
京公网安备 11010802033920号
EEWORLD
