EDS2532CABH-1AL-E datasheet, PDF

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EDS2532CABH-1AL-E: DescriptionSynchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90; Categorystorage; File Size635KB，48 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en; Environmental Compliance

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EDS2532CABH-1AL-E Overview

Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90

EDS2532CABH-1AL-E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ELPIDA
Parts packaging code	BGA
package instruction	TFBGA, BGA90,9X15,32
Contacts	90
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B90
JESD-609 code	e1
length	13 mm
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	90
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX32
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA90,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.14 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.255 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm
Base Number Matches	1

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DATA SHEET

256M bits SDRAM

EDS2532CABH (8M words

32 bits)

Description

The EDS2532CABH is a 256M bits SDRAM organized

as 2,097,152 words

32 bits

4 banks. All inputs and

outputs are synchronized with the positive edge of the

clock.

It is packaged in 90-ball FBGA.

Pin Configurations

/xxx indicate active low signal.

90-ball FBGA

DQ26 DQ24 VSS

VDD DQ23 DQ21

VDDQ VSSQ DQ19

DQ22 DQ20 VDDQ

DQ17 DQ18 VDDQ

A10

BA0

/CAS

VDD

DQ6

DQ1

DQ16 VSSQ

DQM2 VDD

BA1

/CS

A11

/RAS

Features

•

2.5V power supply

Clock frequency: 133MHz/100MHz (max.)

Single pulsed /RAS

×32

organization

4 banks can operate simultaneously and

independently

•

Burst read/write operation and burst read/single write

operation capability

•

Programmable burst length (BL): 1, 2, 4, 8 and full

page

•

2 variations of burst sequence



Sequential (BL = 1, 2, 4, 8, full page)



Interleave (BL = 1, 2, 4, 8)

•

Programmable /CAS latency (CL): 2, 3

•

Byte control by DQM

•

Address



4K Row address /512 column address

•

Refresh cycles



4096 refresh cycles/64ms

•

2 variations of refresh



Auto refresh



Self refresh

•

FBGA package with lead free solder (Sn-Ag-Cu)

DQ28 VDDQ VSSQ

VSSQ DQ27 DQ25

VSSQ DQ29 DQ30

VDDQ DQ31

VSS

VSS DQM3

CKE

CLK

DQM1

/WE DQM0

DQ7 VSSQ

DQ5 VDDQ

DQ3 VDDQ

VDDQ DQ8

VSSQ DQ10 DQ9

VSSQ DQ12 DQ14

DQ11 VDDQ VSSQ

VDDQ VSSQ DQ4

VDD

DQ0

DQ2

DQ13 DQ15 VSS

(Top view)

A0 to A11

BA0, BA1

DQ0 to DQ31

/CS

/RAS

/CAS

/WE

DQM0 to DQM3

CKE

CLK

VDD

VSS

VDDQ

VSSQ

Address inputs

Bank select address

Data-input/output

Chip select

Row address strobe

Column address strobe

Write enable

DQ mask enable

Clock enable

Clock input

Power for internal circuit

Ground for internal circuit

Power for DQ circuit

Ground for DQ circuit

No connection

Document No. E0395E40 (Ver. 4.0)

Date Published October 2004 (K) Japan

URL: http://www.elpida.com

Elpida

Memory, Inc. 2003-2004

EDS2532CABH

CONTENTS

Description.....................................................................................................................................................1

Features.........................................................................................................................................................1

Pin Configurations .........................................................................................................................................1

Ordering Information......................................................................................................................................2

Part Number ..................................................................................................................................................2

Electrical Specifications.................................................................................................................................4

Block Diagram ...............................................................................................................................................9

Pin Function.................................................................................................................................................10

Command Operation ...................................................................................................................................11

Simplified State Diagram .............................................................................................................................19

Mode Register Configuration.......................................................................................................................20

Power-up sequence.....................................................................................................................................22

Operation of the SDRAM.............................................................................................................................23

Timing Waveforms.......................................................................................................................................39

Package Drawing ........................................................................................................................................45

Recommended Soldering Conditions ..........................................................................................................46

Data Sheet E0395E40 (Ver. 4.0)

EDS2532CABH-1AL-E Related Products

	EDS2532CABH-1AL-E	EDS2532CABH-1A-E
Description	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90
Is it Rohs certified?	conform to	conform to
Maker	ELPIDA	ELPIDA
Parts packaging code	BGA	BGA
package instruction	TFBGA, BGA90,9X15,32	TFBGA, BGA90,9X15,32
Contacts	90	90
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Is Samacsys	N	N
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	100 MHz
I/O type	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8
JESD-30 code	R-PBGA-B90	R-PBGA-B90
JESD-609 code	e1	e1
length	13 mm	13 mm
memory density	268435456 bit	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	32	32
Number of functions	1	1
Number of ports	1	1
Number of terminals	90	90
word count	8388608 words	8388608 words
character code	8000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	8MX32	8MX32
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA
Encapsulate equivalent code	BGA90,9X15,32	BGA90,9X15,32
Package shape	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	260
power supply	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified
refresh cycle	4096	4096
Maximum seat height	1.14 mm	1.14 mm
self refresh	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A
Maximum slew rate	0.255 mA	0.255 mA
Maximum supply voltage (Vsup)	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
width	8 mm	8 mm
Base Number Matches	1	1

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