L14F1 datasheet, PDF - EEWORLD Datasheet

L14F1: DescriptionPHOTOTRANSISTOR,DARLINGTON,850NM PEAK WAVELENGTH,200M,CAN-4.7; Categoryphotoelectric phototransistor; File Size70KB，2 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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PHOTOTRANSISTOR,DARLINGTON,850NM PEAK WAVELENGTH,200M,CAN-4.7

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Reach Compliance Code	not_compliant
Is Samacsys	N
Maximum dark power	100 nA
JESD-609 code	e0
Installation features	THROUGH HOLE MOUNT
Maximum on-state current	0.2 A
Maximum operating temperature	155 °C
Minimum operating temperature	-60 °C
Optoelectronic device types	PHOTO DARLINGTON
peak wavelength	850 nm
Maximum power dissipation	0.6 W
Maximum response time	0.0003 s
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

	L14F1	L14F2
Description	PHOTOTRANSISTOR,DARLINGTON,850NM PEAK WAVELENGTH,200M,CAN-4.7	PHOTO DARLINGTON DETECTOR
Is it Rohs certified?	incompatible	incompatible
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
Reach Compliance Code	not_compliant	unknown
Is Samacsys	N	N
Maximum dark power	100 nA	100 nA
JESD-609 code	e0	e0
Installation features	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT
Maximum on-state current	0.2 A	0.2 A
Maximum operating temperature	155 °C	150 °C
Minimum operating temperature	-60 °C	-55 °C
Optoelectronic device types	PHOTO DARLINGTON	PHOTO DARLINGTON
peak wavelength	850 nm	850 nm
Maximum power dissipation	0.6 W	0.6 W
Maximum response time	0.0003 s	0.0003 s
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1

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