M58MR016D100ZC6 datasheet, PDF

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M58MR016D100ZC6: DescriptionFlash, 1MX16, 20ns, PBGA48, 0.50 MM PITCH, TFBGA-48; Categorystorage; File Size390KB，51 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com

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M58MR016D100ZC6 Overview

Flash, 1MX16, 20ns, PBGA48, 0.50 MM PITCH, TFBGA-48

M58MR016D100ZC6 Parametric

Parameter Name	Attribute value
Maker	Numonyx ( Micron )
Parts packaging code	BGA
package instruction	0.50 MM PITCH, TFBGA-48
Contacts	48
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum access time	20 ns
startup block	BOTTOM
JESD-30 code	R-PBGA-B48
length	10.53 mm
memory density	16777216 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	2 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.5 mm
Terminal location	BOTTOM
type	NOR TYPE
width	6.29 mm
Base Number Matches	1

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M58MR016C

M58MR016D

16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst)

1.8V Supply Flash Memory

PRELIMINARY DATA

SUPPLY VOLTAGE

– V

= V

DDQ

= 1.7V to 2.0V for Program,

Erase and Read

– V

= 12V for fast Program (optional)

MULTIPLEXED ADDRESS/DATA

SYNCHRONOUS / ASYNCHRONOUS READ

– Burst mode Read: 40MHz

– Page mode Read (4 Words Page)

– Random Access: 100ns

FBGA

TFBGA48 (ZC)

10 x 4 ball array

PROGRAMMING TIME

– 10µs by Word typical

– Two or four words programming option

MEMORY BLOCKS

– Dual Bank Memory Array: 4/12 Mbit

– Parameter Blocks (Top or Bottom location)

Figure 1. Logic Diagram

VDD VDDQ VPP

A16-A19

ADQ0-ADQ15

M58MR016C

M58MR016D

BINV

WAIT

DUAL OPERATIONS

– Read within one Bank while Program or

Erase within the other

– No delay between Read and Write operations

PROTECTION/SECURITY

– All Blocks protected at Power-up

– Any combination of Blocks can be protected

– 64 bit unique device identifier

– 64 bit user programmable OTP cells

– One parameter block permanently lockable

COMMON FLASH INTERFACE (CFI)

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M58MR016C: 88DEh

– Bottom Device Code, M58MR016D: 88E0h

VSS

AI05228

August 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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