out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain
the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such ap-
plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
12/01/2011
1
IS42S83200D, IS42S16160D
IS45S83200D, IS45S16160D
DEVICE OVERVIEW
The 256Mb SDRAM is a high speed CMOS, dynamic
random-access memory designed to operate in 3.3V V
dd
and 3.3V V
ddq
memory systems containing 268,435,456
bits. Internally configured as a quad-bank DRAM with a
synchronous interface. Each 67,108,864-bit bank is orga-
nized as 8,192 rows by 512 columns by 16 bits or 8,192
rows by 1,024 columns by 8 bits.
The 256Mb SDRAM includes an AUTO REFRESH MODE,
and a power-saving, power-down mode. All signals are
registered on the positive edge of the clock signal, CLK.
All inputs and outputs are LVTTL compatible.
The 256Mb SDRAM has the ability to synchronously burst
data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks
to hide precharge time and the capability to randomly
change column addresses on each clock cycle during
burst access.
A self-timed row precharge initiated at the end of the burst
sequence is available with the AUTO PRECHARGE function
enabled. Precharge one bank while accessing one of the
other three banks will hide the precharge cycles and provide
seamless, high-speed, random-access operation.
SDRAM read and write accesses are burst oriented starting
at a selected location and continuing for a programmed
number of locations in a programmed sequence. The
registration of an ACTIVE command begins accesses,
followed by a READ or WRITE command. The ACTIVE
command in conjunction with address bits registered are
used to select the bank and row to be accessed (BA0,
BA1 select the bank; A0-A12 select the row). The READ
or WRITE commands in conjunction with address bits
registered are used to select the starting column location
for the burst access.
Programmable READ or WRITE burst lengths consist of
1, 2, 4 and 8 locations or full page, with a burst terminate
option.
FUNCTIONAL BLOCK DIAGRAM (FOR 4M
x
16
x
4
BANKS SHOWN)
CLK
CKE
CS
RAS
CAS
WE
DQML
DQMH
16
2
COMMAND
DECODER
&
CLOCK
GENERATOR
DATA IN
BUFFER
16
MODE
REGISTER
13
REFRESH
CONTROLLER
DQ 0-15
SELF
REFRESH
CONTROLLER
A10
A12
A11
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
16
DATA OUT
BUFFER
V
DD
/V
DDQ
V
ss
/V
ss
Q
16
REFRESH
COUNTER
8192
8192
8192
8192
ROW DECODER
MULTIPLEXER
13
MEMORY CELL
ARRAY
13
ROW
ADDRESS
LATCH
13
ROW
ADDRESS
BUFFER
BANK 0
SENSE AMP I/O GATE
COLUMN
ADDRESS LATCH
9
512
(x 16)
BANK CONTROL LOGIC
BURST COUNTER
COLUMN
ADDRESS BUFFER
COLUMN DECODER
9
2
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
12/01/2011
IS42S83200D, IS42S16160D
IS45S83200D, IS45S16160D
PIN CONFIGURATIONS
54 pin TSOP - Type II for x8
V
DD
DQ0
V
DD
Q
NC
DQ1
V
SS
Q
NC
DQ2
V
DD
Q
NC
DQ3
V
SS
Q
NC
V
DD
NC
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ7
V
SS
Q
NC
DQ6
V
DD
Q
NC
DQ5
V
SS
Q
NC
DQ4
V
DD
Q
NC
V
SS
NC
DQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
PIN DESCRIPTIONS
A0-A12
A0-A9
BA0, BA1
DQ0 to DQ7
CLK
CKE
CS
RAS
CAS
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
Column Address Strobe Command
WE
DQM
V
dd
Vss
V
ddq
Vss
q
NC
Write Enable
Data Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
12/01/2011
3
IS42S83200D, IS42S16160D
IS45S83200D, IS45S16160D
PIN CONFIGURATIONS
54 pin TSOP - Type II for x16
V
DD
DQ0
V
DD
Q
DQ1
DQ2
V
SS
Q
DQ3
DQ4
V
DD
Q
DQ5
DQ6
V
SS
Q
DQ7
V
DD
DQML
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SS
Q
DQ14
DQ13
V
DD
Q
DQ12
DQ11
V
SS
Q
DQ10
DQ9
V
DD
Q
DQ8
V
SS
NC
DQMH
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
PIN DESCRIPTIONS
A0-A12
A0-A8
BA0, BA1
DQ0 to DQ15
CLK
CKE
CS
RAS
CAS
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
Column Address Strobe Command
WE
DQML
DQMH
V
dd
Vss
V
ddq
Vss
q
NC
Write Enable
x16 Lower Byte, Input/Output Mask
x16 Upper Byte, Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
12/01/2011
IS42S83200D, IS42S16160D
IS45S83200D, IS45S16160D
PIN CONFIGURATION
54-ball fBGA for x16
(Top View) (8.00 mm x 13.00 mm Body, 0.8 mm Ball Pitch)
Before, I thought about what IDE to use for Renesas board to develop chips. The official website link is [url]http://cn.renesas.com/products/mpumcu/products_for_china/r7f0c806_809/soft_tools_index.jsp...
I wrote a program while (1) { read GPS data; open 1.txt; write data; close 1.txt; } It went wrong after running for about 20 minutes: Application ***** performed an illegal operation, exception: 0xc00...
GPIO can be mapped and read and written through VirtualAlloc and VirtualCopy. But can other registers, such as status registers, be mapped and read in the same way? Does the corresponding IOPreg mean ...
The effect of installing it on my headphone amplifier: (The machine cannot be covered; the green PCB below is also an additional one, input switching circuit.)The board was made when the 5 yuan proofi...
Google's driverless technology is not only an eye-catching technology, but also a subversion of the car usage model.
Those who have watched anti-terrorism films and TV dramas must have been im...[Details]
Remote keyless entry (RKE) systems have become popular with users, with more than 80% of new cars in North America and more than 70% in Europe equipped with RKE systems. In addition to the obvious ...[Details]
Due to the significant increase in electronic devices in automotive and industrial applications, the automotive and industrial markets continue to play an important role in China's electronics in...[Details]
As cellular phones become more advanced, the power consumption of the system during operation and the power consumption during standby are also increasing. Therefore, the power management design of...[Details]
Battery life is critical for portable applications. For applications such as smoke detectors, security devices, and thermostats, factory-installed batteries need to last for more than 10 years. The...[Details]
A standard cell
is an electrochemical
cell
used as a voltage reference standard in many electrical standards laboratories
. If properly maintained, standard cells are very stable. The ...[Details]
Overview
As a remote network communication control method with advanced technology, high reliability, complete functions and reasonable cost, CAN-bus has been widely used in various automa...[Details]
1 Introduction
PROFIBUS is an international, open, and manufacturer-independent fieldbus standard. It is widely used in manufacturing automation, process industry automation, and automatio...[Details]
In recent years, with the rapid development of the information industry, dot matrix LED display screens have been widely used in various advertising and information display systems such as the fina...[Details]
VP2188 is a color STN LCD module produced by Jingdian Pengyuan. This module is a dot matrix transmissive color STN display screen with a color scale of 65 k colors and white LED backlight. Its core...[Details]
OC faults may be the most frequent and the most frequent of all faults in the inverter. They alarm during the startup process, during the shutdown process, during operation, and even when powered o...[Details]
In today's body control module (BCM) designs, savvy engineers are moving away from electromechanical relays whenever possible. Their next step is to eliminate fuses. But is eliminating fuses a nece...[Details]
Today, the value of electronic components in cars accounts for 15-20% of the total vehicle. In the future, this proportion may be as high as 30-40% as more safety electronics, fuel consumption and ...[Details]
Preface
In recent years, white light LEDs have gradually replaced incandescent bulbs and fluorescent lamps because they have unparalleled advantages over traditional light sources in terms...[Details]
1. Overview
At present, an information revolution is in the ascendant around the world, led by microelectronics, computers and communication technologies, and centered on information technolog...[Details]
Renesas Electronics MCUs
京公网安备 11010802033920号
EEWORLD
