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1N5659

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13
CategoryDiscrete semiconductor    diode   
File Size502KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N5659 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13

1N5659 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-13
package instructionHERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage132 V
Minimum breakdown voltage108 V
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-202AA
JESD-30 codeO-MALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage97.2 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
1N5629 thru 1N5665A
1500 WATT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
This popular Transient Voltage Suppressor (TVS) series for 1N5629 thru
1N5665A are JEDEC registered selections for unidirectional devices. All
have the same high Peak Pulse Power rating of 1500 W with extremely fast
response times. They are also available in military qualified selections as
described in the Features section herein. They are most often used for
protecting against transients from inductive switching environments,
induced RF effects, or induced secondary lightning effects as found in
lower surge levels of IEC61000-4-5. They are also very successful in
protecting airborne avionics and electrical systems. Since their response
time is virtually instantaneous, they can also protect from ESD and EFT per
IEC61000-4-2 and IEC61000-4-4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-13
(DO-202AA)
FEATURES
Unidirectional TVS series for thru-hole mounting
Suppresses transients up to 1500 watts @ 10/1000 µs
(see Figure 1)
Clamps transient in less than 100 pico seconds
Working voltage (V
WM
) range 5 V to 171 V
Hermetic sealed DO-13 metal package
JAN/TX/TXV military qualifications also available for
the tighter tolerance “A” suffix devices per MIL-PRF-
19500/500 by adding the JAN, JANTX, or JANTXV
prefix, e.g. JANTXV1N5629A, etc.
For bidirectional TVS in the same DO-13 package,
see separate data sheet for the 1N6036 – 1N6072A
series (also military qualified)
Surface mount equivalent packages also available as
SMCJ5.0 - SMCJ170CA or SMCG5.0 – SMCG170CA
in separate data sheet (consult factory for other
surface mount options)
Plastic axial-leaded equivalents available in the
1N6267 – 1N6303A series in separate data sheet
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1: 1N5629 to 1N5665A
Class 2: 1N5629 to 1N5663A
Class 3: 1N5629 to 1N5655A
Class 4: 1N5629 to 1N5648A
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 : 1N5629 to 1N5658A
Class 2: 1N5629 to 1N5651A
Class 3: 1N5629 to 1N5643A
Class 4: 1N5629 to 1N5636A
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: 1N5629 to 1N5642A
Class 3: 1N5629 to 1N5635A
Inherently radiation hard per Microsemi MicroNote 050
MAXIMUM RATINGS
1500 Watts for 10/1000
µs
with repetition rate of 0.01% or
o
less*
at lead temperature (T
L
) 25 C (See Figs. 1, 2, & 4)
Operating & Storage Temperatures: -65
o
to +175
o
C
THERMAL RESISTANCE: 50
o
C/W junction to lead at
0.375 inches (10 mm) from body or 110
o
C/W junction to
2
ambient when mounted on FR4 PC board with 4 mm
copper pads (1 oz) and track width 1 mm, length 25 mm
DC Power Dissipation
*
: 1 Watt at T
L
< +125
o
C 3/8” (10
mm) from body (see derating in Fig 3 and note below)
Forward surge current: 200 Amps for 8.3ms half-sine
wave at T
A
= +25
o
C
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method
2026
POLARITY: Cathode connected to case and polarity
indicated by diode symbol
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
1N5629 thru 1N5665A
5629 thru 1N5665A
*
TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
Copyright
2002
11-06-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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