BYG23M
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction chip.
- Ideal for automated placement
- Fast switching for high efficiency
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
High Efficient Surface Mount Rectifiers
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Indicated by cathode band
Weight:
0.064 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 1.5 A
Maximum reverse current @ rated VR
T
J
=25
℃
T
J
=100℃
T
J
=125
℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
BYG23M
1000
700
1000
1
30
1.7
5
I
R
50
150
E
RSM
Trr
Cj
R
θJA
T
J
T
STG
20
75
15
70
- 55 to +150
- 55 to +150
O
UNIT
V
V
V
A
A
V
μA
Pulse energy in avalanche mode, non repetitive
(Inductive load switch off ) T
A
=25℃, L=120mH
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts.
mJ
ns
pF
C/W
O
O
C
C
Document Number: DS_D1309034
Version: A13
BYG23M
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
E2
E3
GREEN COMPOUND
CODE
BYG23M
Suffix "G"
Clip SMA
Clip SMA
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
PACKAGE
PACKING
EXAMPLE
PREFERRED P/N
BYG23M E2
BYG23M E2G
PART NO.
BYG23M
BYG23M
PACKING CODE
E2
E2
GREEN COMPOUND
CODE
DESCRIPTION
G
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- MAXIMUM AVERAGE FORWARD CURRENT
DERATING
1.2
AVERAGE FORWARD CURRENT (A)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT
(μA)
1
0.8
0.6
0.4
0.2
0
80
90
100
110
120
130
140
150
LEAD TEMPERATURE (
o
C)
100
TJ=125℃
10
1
TJ=25℃
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
PEAK FORWARD SURGE URRENT (A)
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
40
JUNCTION CAPACITANCE (pF)
35
30
25
20
15
10
5
1
10
100
8.3ms Single Half Sine Wave
JEDEC Method
FIG. 4- TYPICAL JUNCTION CAPACITANCE
70
60
50
40
30
20
10
0
0.1
1
10
100
REVERSE VOLTAGE (V)
f=1.0MHz
Vslg=50mVp-p
NUMBER OF CYCLES AT 60 Hz
Document Number: DS_D1309034
Version: A13
BYG23M
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1309034
Version: A13