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BD241BBC

Description
3A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryThe transistor   
File Size120KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BD241BBC Overview

3A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BD241BBC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1
BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
http://onsemi.com
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MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CES
V
EB
I
C
I
B
I
CM
P
D
BD242B
80
90
BD241C
BD242C
100
115
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Collector−Emitter Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
5.0
3.0
5.0
1.0
Collector Current
−Continuous
Collector Current
Peak
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
40
0.32
W
W/°C
°C
V
V
Operating and Storage
Junction Temperature Range
ESD
Human Body Model
ESD
Machine Model
T
J
, T
stg
HBM
MM
– 65 to + 150
3B
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
High Current Gain
Bandwidth Product
Compact TO−220 AB Package
Epoxy Meets UL94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
POWER TRANSISTORS
COMPLEMENTARY
SILICON
3 AMP
80−100 VOLTS
40 WATTS
COMPLEMENTARY
COLLECTOR 2,4
COLLECTOR 2,4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
MARKING
DIAGRAM
TO−220AB
CASE 221A−09
STYLE 1
1
2
AYWW
BD24xxG
3
BD24xx = Device Code
xx = 1C, 2B, or 2C
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
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THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJA
Max
Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
62.5
°C/W
°C/W
R
qJC
3.125
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
ORDERING INFORMATION
Device
BD241CG
BD242BG
BD242CG
Package
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
BD241C/D
August, 2013
Rev. 9
1
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