DS2009SF43 datasheet, PDF - EEWORLD Datasheet

DS2009SF43: DescriptionRectifier Diode, 1 Phase, 1 Element, 1580A, 4300V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size189KB，8 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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DS2009SF43 Overview

Rectifier Diode, 1 Phase, 1 Element, 1580A, 4300V V(RRM), Silicon,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	113282586
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.8 V
Maximum non-repetitive peak forward current	16500 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	1100 A
Maximum repetitive peak reverse voltage	4300 V
surface mount	NO

	DS2009SF43	DS2009SF48	DS2009SF46	DS2009SF47	DS2009SF44	DS2009SF45
Description	Rectifier Diode, 1 Phase, 1 Element, 1580A, 4300V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 1580A, 4800V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 1580A, 4600V V(RRM), Silicon,	Rectifier Diode, 1 Element, 1100A, 4700V V(RRM),	Rectifier Diode, 1 Element, 1100A, 4400V V(RRM),	Rectifier Diode, 1 Phase, 1 Element, 1580A, 4500V V(RRM), Silicon,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Maximum non-repetitive peak forward current	16500 A	16500 A	16500 A	16500 A	16500 A	16500 A
Number of components	1	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	1100 A	1100 A	1100 A	1100 A	1100 A	1100 A
Maximum repetitive peak reverse voltage	4300 V	4800 V	4600 V	4700 V	4400 V	4500 V
surface mount	NO	NO	NO	NO	NO	NO
Maker	-	Microsemi	Microsemi	-	Microsemi	Microsemi

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