TRANSISTOR,BJT,PNP,350V V(BR)CEO,8A I(C),TO-220AB
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | NXP |
| package instruction | , |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Maximum collector current (IC) | 8 A |
| Configuration | Single |
| Minimum DC current gain (hFE) | 5 |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 80 W |
| surface mount | NO |
| Base Number Matches | 1 |
| MJE5851 | MJE5852 | |
|---|---|---|
| Description | TRANSISTOR,BJT,PNP,350V V(BR)CEO,8A I(C),TO-220AB | TRANSISTOR,BJT,PNP,400V V(BR)CEO,8A I(C),TO-220AB |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | NXP | NXP |
| Reach Compliance Code | unknown | unknown |
| Maximum collector current (IC) | 8 A | 8 A |
| Configuration | Single | Single |
| Minimum DC current gain (hFE) | 5 | 5 |
| Maximum operating temperature | 150 °C | 150 °C |
| Polarity/channel type | PNP | PNP |
| Maximum power dissipation(Abs) | 80 W | 80 W |
| surface mount | NO | NO |
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