NPN Silicon High-Voltage Transistors
BF 720
BF 722
q
Suitable for video output stages in TV sets and
q
q
q
q
switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Low capacitance
Complementary types: BF 721/723 (PNP)
Type
BF 720
BF 722
Marking
BF 720
BF 722
Ordering Code
(tape and reel)
Q62702-F1238
Q62702-F1306
Pin Configuration
1
2
3
4
B
C
E
C
Package
1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation,
T
S
≤
110 ˚C
2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
87
≤
27
Symbol
BF 720
V
CE0
V
CER
V
CB0
V
EB0
I
C
I
CM
P
tot
T
j
T
stg
–
300
300
5
Values
BF 722
250
–
250
5
50
100
1.5
150
Unit
V
mA
W
˚C
– 65 … + 150
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
BF 720
BF 722
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
BF 722
Collector-emitter breakdown voltage
I
C
= 10
µ
A,
R
BE
= 2.7 kΩ
BF 720
Collector-base breakdown voltage
I
C
= 10
µ
A,
I
B
= 0
BF 720
BF 722
Emitter-base breakdown voltage
I
E
= 10
µ
A,
I
C
= 0
Collector-base cutoff current
V
CB
= 200 V,
I
E
= 0
Collector-emitter cutoff current
V
CE
= 200 V,
R
BE
= 2.7 kΩ
V
CE
= 200 V,
R
BE
= 2.7 kΩ,
T
A
= 150 ˚C
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
DC current gain
1)
I
C
= 25 mA,
V
CE
= 20 V
Collector-emitter saturation voltage
1)
I
C
= 30 mA,
I
B
= 5 mA
AC characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 10 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 30 V,
I
C
= 0,
f
= 1 MHz
f
T
C
obo
–
–
100
0.8
–
–
MHz
pF
V
(BR)CE0
V
(BR)CER
V
(BR)CB0
300
250
V
(BR)EB0
I
CB0
I
CER
–
–
I
EB0
h
FE
V
CEsat
–
50
–
–
–
–
–
–
50
10
10
–
0.6
nA
µ
A
µ
A
Values
typ.
max.
Unit
250
300
–
–
–
–
V
–
–
–
–
–
–
–
10
nA
5
–
–
V
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
2
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