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IDT71V3556S200BGG8

Description
ZBT SRAM, 128KX36, 3.2ns, CMOS, PBGA119
Categorystorage   
File Size3MB,28 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance
Download Datasheet Parametric View All

IDT71V3556S200BGG8 Overview

ZBT SRAM, 128KX36, 3.2ns, CMOS, PBGA119

IDT71V3556S200BGG8 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Reach Compliance Codeunknown
Is SamacsysN
Maximum access time3.2 ns
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee1
memory density4718592 bit
Memory IC TypeZBT SRAM
memory width36
Humidity sensitivity level3
Number of terminals119
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusNot Qualified
Maximum standby current0.04 A
Minimum standby current3.14 V
Maximum slew rate0.4 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Base Number Matches1
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