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BFY90

Description
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72
CategoryThe transistor   
File Size40KB,2 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72

BFY90 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
package instructionCYLINDRICAL, O-MBCY-W4
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.025 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-72
JESD-30 codeO-MBCY-W4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Minimum power gain (Gp)8 dB
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)2000 MHz
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