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5KP6.0AB

Description
Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon
Categorydiode   
File Size891KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Download Datasheet Parametric View All

5KP6.0AB Overview

Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon

5KP6.0AB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerLittelfuse
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE P600
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresUL RECOGNIZED
Maximum breakdown voltage7.37 V
Minimum breakdown voltage6.67 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation5000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
Certification statusNot Qualified
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
Axial Leaded – 5000W > 5KP series
Transient Voltage Suppression Diodes
5KP Series
Description
Uni-directional
RoHS
The 5KP Series is designed specifically to protect sensitive
electronic equipment from voltage transients induced by
lightning and other transient voltage events.
Features
V
BR
@T
J
= V
BR
@25°C × (1+
α
T
x (T
J
- 25))
(αT: Temperature Coefficient)
Bi-directional
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E128662/E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25°C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation by
10/1000μs Test Waveform (Fig.2)
(Note 1)
Steady State Power Dissipation on
Inifinite Heat Sink at T
L
=75ºC (Fig. 6)
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave Unidirectional
Only (Note 2)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
Only (Note 3)
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
T
J
, T
STG
R
uJL
R
uJA
Value
5000
8.0
400
3.5/5.0
-55 to 150
8.0
40
Unit
W
W
A
V
• Glass passivated chip
junction in P600 package
• 5000W peak pulse
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Fast response time:
typically less than 1.0ps
from 0 Volts to BV min
• Excellent clamping
capability
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
15kV(Air), 8kV (Contact)
Applications
• ESD protection of data
lines in accordance with
IEC 61000-4-2 (IEC801-2)
• EFT protection of data
lines in accordance with
IEC 61000-4-4 (IEC801-4)
• Low incremental surge
resistance
• Typical I
R
less than 2μA
above 12V
• High temperature
soldering guaranteed:
260°C/40 seconds /
0.375” (9.5mm) lead
,
length, 5 lbs., (2.3kg)
tension
• Plastic package has
underwriters laboratory
flammability classification
94V-O
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
°C
°C/W
°C/W
TVS devices are ideal for the protection of I/O interfaces,
V
CC
bus and other vulnerable circuits used in telecom,
computer, industrial and consumer electronic applications.
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
A
= 25°C per Fig. 3.
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per
minute maximum.
_
_
3. V
F
<3.5V for devices of V
BR
<
200V and V
F
<5.0V for devices of V
BR
>
201V.
Functional Diagram
Additional Information
Bi-directional
Datasheet
Resources
Samples
Cathode
Uni-directional
Anode
© 2014 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/24/14
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