MN18R1624(8)EF0
MP18R1624(8)EF0
(
16Mx18)*4(8)pcs NexMod™ Module based on 288Mb E-die, 32s banks,16K/32ms Refresh, 2.5V
Overview
The NexMod™ module is a general purpose for high-
performance memory subsystem suitable for a broad range
of applications including networking, digital consumer,
mobile
"Thin
and light" PCs, and other applications systems
where high bandwidth and low latency are required.
The NexMod product family addresses the needs of
customers designing space-constrained systems. The Single-
Channel RDRAM
®
NexMod memory module is a cost
effective, small volumetric form factor solution that provides
virtually all the components needed for a complete Rambus
®
Channel. The NexMod module simplifies system layout and
speeds time-to-market by placing the end-of-channel termi-
nation, VRM(Voltage Regulator Module) and DRCG(Direct
Rambus™ Clock Generator) all on the module.
The NexMod module is consisted of 288Mb RDRAM
devices. These are extremely high speed CMOS DRAMs
organized as 16M words by 18 bits. The use of Rambus
Signaling Level(RSL) technology permits up to 1066MHz
transfer rates while using conventional system and board
design technologies. RDRAM devices are capable of
sustained data transfers up to at 0.94ns per two bytes (7.5ns
per 16 bytes)
The RDRAM Architecture enables the highest sustained
bandwidth for multiple, simultaneous, randomly addressed,
memory transactions. The seperate control and data buses
with independent row and column control yield high bus
efficiency. The RDRAM device’s thirty-two bank architec-
ture supports up to four simultaneous transactions per
device.
- Terminations/DRCG/VRM(generates Vterm) on module
- RDRAM VREF generated on module
♦
Stacked PCB design improves signal integrity and margin
- Shortened channel length by stacking PCB and placing
termination on module
- Optional BGA or PGA connectors to mainboard enable
mounting flexibility
- BGA interposers within module
Key Timing Parameters/Part Numbers
The following table lists the frequency and latency bins
available for NexMod modules.
Table 1: Part Number by Freq. & Latency
Speed
Organization
Bin
-CT9
-CM8
-CT9
-CM8
I/O
t
rac
(Row
Freq.
Access
(MHz)
Time) ns
1066
800
1066
800
32P
40
32P
40
Part Number
64M x 18
MN
a
(P
b
)18R1624EF0-CT9
MN(P)18R1624EF0-CM8
MN(P)18R1628EF0-CT9
MN(P)18R1628EF0-CM8
128M x 18
a. BGA type connector
b. PGA type connector
Form Factor
The NexMod modules are offered in 200-ball(or pin)
1.27mm bottom connector ball(or pin) pitch form factor
suitable for 200 contact NexMod connectors. Figure 1
below, shows a eight device NexMod module.
Features
♦
High speed up to 1066MHz RDRAM storage
♦
200 bottom connector pads with 1.27mm pad spacing
♦
Module footprint : 1.1 inches x 2.0 inches
♦
Module PCB size : 50.80mm x 27.94mm x 1.0mm
♦
Interposer type-1 PCB size: 7.62mm x 26.67mm x 1.1mm
♦
Interposer type-2 PCB size: 7.62mm x 26.67mm x 2.1mm
♦
Each RDRAM device has 32 banks, for a total of 128/256
banks on 144MB/288MB module respectively
♦
Serial Presence Detect(SPD) support
♦
Operates from a 2.5 volt supply (± 5%)
♦
Low power and powerdown self refresh modes
♦
Sperate Row and Column buses for heigher efficiency
♦
WBGA lead-free package (92 balls)
♦
Simplifies system layout and speeds time-to-market
Figure 1 : NexMode Module shown with heat spreader
removed
Page 1
Version 1.0 May 2004
MN18R1624(8)EF0
MP18R1624(8)EF0
Table 3 : Module Connector Pad Description
Signal
Pins
A7, A8, A9, A10, A11, A12, A13,
A37, A40, A42, A43, A44, A45, A46,
A47, A48, A49, A50, A51, A52, A53,
A54, A55, A56, A57, A58, A79, A82,
A86, A87, A90, A93, A95, A96, A97,
B2, B6, B7, B8, B9, B10, B13, B15,
B16, B17, B18, B19, B20, B39, B40,
B42, B43, B44, B45, B46, B47, B48,
B49, B50, B51, B52, B53, B54, B55,
B56, B57, B58, B59, B60, B77, B80,
B87, B88, B89, B90, B91, B92, B93,
B94, B100
A27
A28
A63
A30, A72, B31, A73, A32
A69
A68
A62, B64, A23, B65, A24, B66, A25,
B67, A26
A78, A77, A36, A76, A35, A75, A34,
A74, A33
A70, A29, A71
A22
B14, B22, A23, B24, B25, B26, B27,
B28, B29, B30, B31, B32, B33, B34,
B35, B36, B37, B38, B62, B63, B64,
B65, B66, B67, B68, B69, B70, B71,
B72, B73, B74, B75, B76
A17
A18
A19
A100
I
I
I
I
SVdd
SVdd
SVdd
SVdd
I
I
I
I
O
O
RSL
RSL
V
CMOS
RSL
RSL
RSL
I/O
Type
Description
Gnd
Ground reference for connenctor pads, RDRAM core, and
interface. 79 pads.
CFM
CFMN
CMD
COL4..
COL0
CTM
CTMN
DQA8..
DQA0
DQB8..
DQB0
ROW2..
ROW0
SCK
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Positive polarity.
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Negative polarity.
Serial command input used to read from and write to the con-
trol registers. Also used for power management.
Column bus. 5-bit bus containing control and address infor-
mation for column accesses.
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Positive polarity.
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Negative polarity.
Data bus A. A 9-bit bus carrying a byte of read or write data
between the Channel and the RDRAM device. DQA8 is non-
functional on modules with x16 RDRAM devices
Data bus B. A 9-bit bus carrying a byte of read or write data
between the Channel and the RDRAM device. DQB8 is non-
functional on modules with x16 RDRAM devices.
Row bus. 3-bit bus containing control and address information
for row accesses.
Serial Clock input. Clock source used to read from and write
to the RDRAM control registers.
I/O
RSL
I/O
RSL
I
I
RSL
V
CMOS
NC
These pads are not connected. These 33 connector pads are
reserved for future use.
SA0
SA1
SA2
SCL
Serial Presence Detect Address 0.
Serial Presence Detect Address 1.
Serial Presence Detect Address 2.
Serial Presence Detect Clock
Page 4
Version 1.0 May 2004
NXP MCU
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