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IRFR110

Description
Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
CategoryThe transistor   
File Size204KB,8 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
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IRFR110 Overview

Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IRFR110 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHarris
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)19 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)4.3 A
Maximum drain current (ID)4.7 A
Maximum drain-source on-resistance0.54 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment30 W
Maximum power dissipation(Abs)25 W
Maximum pulsed drain current (IDM)17 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)42 ns
Maximum opening time (tons)47 ns
Base Number Matches1
M
A
A
HARRIS POWER PRODUCT LINE
TO-263AB (D
2
-PAK)
21A TO 30A
31A TO 40A
41A TO 50A
51A TO 60A
61A TO 70A
RF1S70N03SM
30V, 70A, 0.010Ω
RF1S45N03LSM
30V, 45A, 0.022Ω
RF1S60P03SM (Note)
30V, 60A, 0.027Ω
RF1S30P05SM (Note)
50V, 30A, 0.065Ω
RF1S70N06SM
60V, 70A, 0.014Ω
11A TO 20A
RF1S Series Power MOSFET TO-263AB Product Matrix
BV
DSS
r
DS(ON)
0A TO 10A
30V
0.010Ω
0.022Ω
0.027Ω
50V
0.065Ω
60V
0.014Ω
0.022Ω
0.028Ω
RF1S50N06SM
60V, 50A, 0.022Ω
RF1S45N06SM
60V, 45A, 0.028Ω
RF1S50N06LESM
60V, 50A, 0.022Ω
RF1S45N06LESM
60V, 45A, 0.028Ω
0.047Ω
0.065Ω
RF1S25N06SM
60V, 25A, 0.047Ω
RF1S30N06LESM
60V, 30A, 0.047Ω
RF1S23N06LESM
60V, 23A, 0.065Ω
RF1S30P06SM
60V, 30A, 0.065Ω
0.100Ω
0.140Ω
RF1S40N10SM
100V, 40A, 0.040Ω
RF1S40N10LESM
100V, 40A, 0.040Ω
RF1S17N06LSM
60V, 17A, 0.100Ω
RF1S15N06SM
60V, 15A, 0.140Ω
100V
0.040Ω
0.077Ω
PART NOMENCLATURE
R
X
XX XX
X
XX
XXX
0.080Ω
RF1S540SM
100V, 28A, 0.077Ω
RF1S22N10SM
100V, 22A, 0.080Ω
0.160Ω
0.200Ω
DEVICE TYPE
F: Standard MOSFET
L: Current Limited MOSFET
0.300Ω
200V
0.18Ω
RF1S530SM
100V, 14A, 0.160Ω
RF1S9540SM (Note)
100V, 19A, 0.200Ω
RF1S9530SM (Note)
100V, 12A, 0.300Ω
RF1S640SM
200V, 18A, 0.180Ω
FEATURE SUFFIX
L: Logic Level 5V Gate
SM: Surface Mount Leadform
(TO-263AB)
E: ESD Protected Device
9A: Tape and Reel
PACKAGE DESIGNATION
1S: TO-262, TO-263
VOLTAGE RATING
05 = 50V, 10 = 100V,
20 = 200V, etc.
CURRENT RATING
1 = 1A, 10 = 10A, 25 = 25A, etc.
0.400Ω
RF1S9640SM (Note)
200V, 11A, 0.500Ω
RF1S630SM
200V, 9A, 0.400Ω
0.500Ω
0.800Ω
POLARITY
N: N-Channel
P: P-Channel
EXAMPLE: RF1S60P03SM
Standard 60A, P-Channel, 30V, Surface Mount MOSFET
1000V
3.500Ω
RF1S9630SM (Note)
200V, 6.5A, 0.800Ω
RF1S4N100SM
1000V, 4.3A, 3.500Ω
NOTE: P-Channel Device
BOLD = Logic Level Devices
ITALICS = Future Offerings (2nd Quarter FY ’97)
S E M I C O N D U C TO R
LC96586_1.1
LC96586

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