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MJE13007AN

Description
8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryThe transistor   
File Size161KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MJE13007AN Overview

8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE13007AN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)14 MHz
Base Number Matches1
MJE13007G
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE13007G is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V SWITCHMODE applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
Features
http://onsemi.com
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS
80 WATTS
COLLECTOR
2,4
SOA and Switching Applications Information
Standard TO−220
These Devices are Pb−Free and are RoHS Compliant*
Complementary to the MJE5850 through MJE5852 Series
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Collector Current
Base Current
Base Current
Emitter Current
Emitter Current
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
T
J
, T
stg
Value
400
700
9.0
8.0
16
4.0
8.0
12
24
80
0.64
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
Adc
Adc
W
W/_C
_C
1
2
1
BASE
3
EMITTER
4
TO−220AB
CASE 221A−09
STYLE 1
3
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
MJE13007G
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.56
62.5
260
Unit
_C/W
_C/W
_C
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*Measurement made with thermocouple contacting the bottom insulated mounting
surface of the package (in a location beneath the die), the device mounted on a
heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
ORDERING INFORMATION
Device
MJE13007G
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
August, 2013
Rev. 8
1
Publication Order Number:
MJE13007/D
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