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MRF173

Description
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-11, 4 PIN
CategoryThe transistor   
File Size334KB,12 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance  
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MRF173 Overview

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-11, 4 PIN

MRF173 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMACOM
package instructionFLANGE MOUNT, O-CRFM-F4
Contacts4
Manufacturer packaging codeCASE 211-11
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
Maximum drain current (Abs) (ID)9 A
Maximum drain current (ID)9 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)220 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
MRF173
The RF MOSFET Line
80W, 175MHz, 28V
Designed for broadband commercial and military applications up to
200 MHz frequency range. The high–power, high–gain and broadband
performance of this device make possible solid state transmitters for
FM broadcast or TV channel frequency bands.
N–Channel enhancement mode MOSFET
M/A-COM Products
Released - Rev. 07.07
Product Image
Guaranteed performance at 150 MHz, 28 V:
Output power = 80 W
Gain = 11 dB (13 dB typ.)
Efficiency = 55% min. (60% typ.)
Low thermal resistance
Ruggedness tested at rated output power
Nitride passivated die for enhanced reliability
Low noise figure — 1.5 dB typ at 2.0 A, 150 MHz
Excellent thermal stability; suited for Class A operation
CASE 211–11, STYLE 2
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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