High Barrier Silicon Schottky Diodes:
Bridge Octoquad
V 2.00
MA4E2099-1284
Features
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ODS-1284 Outline (Topview)
Designed for High Dynamic Range Applications
Low Parasitic Capitance and Inductance
Low Parasitic Resistance
Recommended for DC-12GHz
Uniform Electrical Characteristics with Each Junction
Rugged HMIC Construction with Polyimide Scratch
Protection
Description
The MA4E2099-1284 Bridge Octoquad is offered for high
dynamic range applications. This device is constructed with
Silicon High Barrier Schottky Diodes fabricated with the
patented Heterolithic Microwave Integrated Circuit (HMIC)
process to ensure electrical characteristics uniformity for each
junction. HMIC circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass dielectric,
which acts as the low dispersion, low loss, microstrip
transmission medium. The combination of silicon and glass
allows HMIC devices to have excellent loss and power
dissipation characteristics in a low profile, reliable device.
Applications
The devices can be used in higher power mixer, detector, and
limiter circuits through 12 GHz.
Dim
A
B
C
Inches
Millimeters
Min.
0.0285
0.0285
0.0040
0.0035
0.0165
Max.
0.0297
0.0297
0.0060
0.0043
0.0173
Min.
0.725
0.725
0.102
0.090
0.420
Max.
0.755
0.755
0.153
0.110
0.440
Absolute Maximum Ratings
1
@ +25 °C
Parameter
Operating Temperature
Storage Temperature
Forward Current
Reverse Voltage
RF C.W. Incident Power
RF & DC Dissipated Power
Value
-55 °C to +150 °C
-55 °C to +150 °C
20 mA
l -9 V l
+ 25 dBm
100 mW
D Sq.
E
Equivalent Circuit
2
1
3
4
1. Exceeding any of these values may result in permanent
damage
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High Barrier Silicon Schottky Diodes: Bridge Octoquad
MA4E2099-1284
V 2.00
Electrical Specifications @ 25 °C
(Measured at Adjacent Ports: 1-2, 2-3, 3-4, 4-1)
Part
Number
Vf @ 1 mA
(V)
Vf @ 10 mA
(V)
Ct @ 0V
(pF)
Vb @10
µA
(V )
Rt Slope Resistance
( Vf1 - Vf2 ) /
(10.5 mA-9.5 mA )
(
Ω
)
Max
16
Min
MA4E2099-1284
1.08
Max
1.24
Min
1.32
Max
1.52
Typ
0.16
Min
9
Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the Ohmic Resistance.
Handling
All semiconductor chips should be handled with care to avoid
damage or contamination from perspiration and skin oils. The
use of plastic tipped tweezers or vacuum pickups is strongly
recommended for individual components. The top surface of
the die has a protective polyimide coating to minimize damage.
Bulk handling should insure that abrasion and mechanical
shock are minimized.
The rugged construction of these HMIC devices allows the use
of standard handling and die attach techniques. It is important
to note however that industry standard electrostatic discharge
(ESD) control is required at all times, due to the sensitive
nature of Schottky devices having a Class 0 rating.
Die Attach
Die attach for these devices is made through the use of
conventional gold plated die attach technology. A vacuum
collet or plastic tweezers are recommended for device
placement onto the circuit or ground plane. The device
backside metal consists of approximately 0.3 um Ti-Pt-Au.
This metallization scheme allows for die attach to hard and
soft substrates ( for via grounding ) and Au plated metal
ground planes with 80Au/20Sn and Sn63/Pb37 solders. The
maximum time-temperature profile is 300
°
C for 5 sec.
Attachment of die to circuit medium with electrically
conductive silver epoxies is also acceptable.
Die Bonding
Wire and ribbon bonding from the topside bond pads to the
circuit can be accomplished with 1 mil dia. gold wire or ¼
x 3 mil sq. gold ribbon. Ball bonding, wedge bonding, or
thermo-compression bonding are all acceptable. The
topside of the die is protected with a durable polymer for
impact and scratch protection.
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M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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North America:
Tel. (800) 366-2266
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Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
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Europe:
Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
High Barrier Silicon Schottky Diodes: Bridge Octoquad
MA4E2099-1284
V 2.00
MA4E2099-1284 High Barrier SPICE PARAMETERS (per Diode)
Is
(nA)
5.7 E-2
Rs
(
Ω
)
6
N
1.20
Cj0
( pF )
2.4 E-1
M
0.5
Ik
(mA)
4
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
Ordering Information
Part Number
MA4E2099-1284W
MA4E2099-1284
MA4E2099-1284T
Package
Wafer on Frame
Die in Carrier
Tape/Reel
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
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