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B531F-2T

Description
Silicon Controlled Rectifier, 400V V(RRM),
CategoryTrigger device   
File Size240KB,2 Pages
ManufacturerCynergy 3
Download Datasheet Parametric View All

B531F-2T Overview

Silicon Controlled Rectifier, 400V V(RRM),

B531F-2T Parametric

Parameter NameAttribute value
MakerCynergy 3
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationBRIDGE, HALF-CONTROLLED
Maximum DC gate trigger current60 mA
Maximum DC gate trigger voltage2.5 V
Quick connection description2G-2AK-CA-CK
Description of screw terminals0
On-state non-repetitive peak current250 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Repeated peak reverse voltage400 V
Base Number Matches1
series B-2T B-2
,
25-42.5Amp • SCR/Diode Modules
Modules come in eight standard circuits and are designed to
control AC or DC variable voltage output up to 15KW. The
package comes with standard .250 quick-connect terminals.
All models have 2500 Vrms isolation and are UL recognized
E72445. Optional isolation barriers are available.
#
Eight Standard Circuits
#
AC or DC Variable Voltage
Output to 15KW
Mechanical Dimensions
All dimensions are in inches (millimeters)
2.50
(63.5)
1.90
(48.2)
Electrical Specifications
I
D
V
F
MOUNTING
HOLE/SLOT
0.21 (5.2) DIA.
B5
25
1.65V @ 25A
B6
42.5
1.6V @ 42.5A
Maximum DC Output Current @ Tc = 85˚C (A)
Maximum Voltage Drop @ Amps Peak
Operating Junction Temperature Range
T
J
di/dt
-40˚C to +125˚C
100
500
400 (120Vac)
600 (240Vac)
800 (280Vac)
1200 (480Vac)
250
260
60
2.5
0.5W
5.0V
0.9˚C/W
0.7˚C/W
600
1500
80
3.0
B-2T
1.25
C
1.00
L
(25.4
)
(31.7)
Critical Rate of Rise of On-State
Current @ TJ=125˚C (A/µs)
dv/dt Critical Rate of Rise of Off-State Voltage
V
RMS
Repetitive Peak Reverse Voltage
(AC Line Input Voltage)
Maximum Non-Repetitive
Surge Current (A) [ 1/2Cycle, 60Hz]
Maximum I2T for Fusing (A2sec) [t=8.3ms]
Maximum Required Gate Current
to Trigger @ 25˚C (mA)
Maximum Required Gate
Voltage to Trigger @ 25˚C (V)
C
L
.50
(12.7)
.25 TERMINAL
(6.3)
1.06
(26.9)
.10
(2.5)
I
TSM
.55
(14.0)
I
2
T
I
GT
2.50
(63.5)
1.90
(48.2)
MOUNTING
HOLE/SLOT
0.21 (5.2) DIA.
V
GT
B-2
C
L
1.25
(31.7)
P
G(AV)
Average Gate Power
V
GM
R
OJC
C
L
.25 TERMINAL
(6.3)
Maximum Peak Gate Voltage (Reverse)
Maximum Thermal Resistance Junction to
Ceramic Base per Chip
Isolation Voltage
V
ISOL
.78
(19.7)
2500 V
RMS
.10
(2.5)
Mechanical Specifications
Weight (Typical)
1.5 oz. (42.5g)
ISO
9001
C E R T I F I E D
Competitive part number cross-reference available at:
www.cynergy3.com
ASIA - Thailand
Telephone
+66 (0)2 665 2517
Fax
+66 (0)2 665 2588
Cynergy 3 Components, Asia
18/8 Fico Place 12th Floor
Soi Sukhumvit 21 (Asoke)
Klongtoey Nua, Wattana
Bangkok, Thailand 10110
Approvals
UL - E72445
USA
Sales & Tech Support
(866) 258-5057
Email:
sales@cynergy3.com
Cynergy3 Components
2320 Paseo de las Americas, Suite 104
San Diego, CA 92154
EUROPE - UK
Telephone
+44 (0) 1202 897969
Fax
+44 (0) 1202 891918
Email:
sales@cynergy3.com
Cynergy3 Components Ltd.
7 Cobham Road
Ferndown Industrial Estate
Wimborne, Dorset BH21 7PE
© 2006 Cynergy3 components, All Rights Reserved. Specifications are subject to change without prior notice. Cynergy3 components and the Cynergy3 components logo are trademarks of Cynergy3 components Corp.
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