IPP048N06L G
IPB048N06L G
OptiMOS
®
Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
SMDversion
60
4.4
100
V
m
A
Type
IPP048N06L
IPB048N06L
Package
Marking
PG-TO220-3
048N06L
PG-TO263-3
048N06L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
1)
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
C
=25 °C
2)
I
D
=100 A,
R
GS
=25
I
D
=100 A,
V
DS
=48 V,
di /dt =200 A/μs,
T
j,max
=175 °C
Value
100
100
400
810
mJ
Unit
A
Reverse diode dv /dt
dv /dt
V
GS
P
tot
T
j
,
T
stg
6
kV/μs
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
±20
T
C
=25 °C
300
-55 ... 175
55/175/56
V
W
°C
1)
2)
Current is limited by bondwire; with an R
thJC
=0.5 the chip is able to carry 161A
See figure 3
Rev. 1.13
page 1
2007-08-29
IPP048N06L G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
V
DS
=V
GS
,
I
D
=270 μA
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=100 A
V
GS
=4.5 V,
I
D
=66 A
V
GS
=10 V,
I
D
=100 A,
SMD version
V
GS
=4.5 V,
I
D
=66A,
SMD version
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=100 A
-
92
60
1.2
-
1.6
-
-
-
-
-
-
Values
typ.
IPB048N06L G
Unit
max.
0.5
62
40
K/W
-
2
V
Zero gate voltage drain current
I
DSS
-
0.01
1
μA
-
-
-
-
1
10
3.7
4.4
3.4
100
100
4.7
5.7
4.4
nA
m
4.1
1.9
183
5.4
-
-
S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain connection.
PCB is vertical in still air.
3)
Rev. 1.13
page 2
2007-08-29
IPP048N06L G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
I
S
T
C
=25 °C
I
S,pulse
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
-
-
-
-
IPB048N06L G
Unit
max.
Values
typ.
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30 V,
V
GS
=4.5 V,
I
D
=100 A,
R
G
=1.3
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
-
-
-
-
-
-
-
5700
1500
350
18
25
98
24
7600
2000
525
27
38
150
36
pF
ns
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=30 V,
V
GS
=0 V
V
DD
=30 V,
I
D
=100 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
-
20
9.1
54
64
169
3.5
47
26
12
81
95
225
-
63
nC
V
100
400
A
Diode forward voltage
V
SD
-
0.93
1.3
V
Reverse recovery time
Reverse recovery charge
t
rr
Q
rr
V
R
=30 V,
I
F
=I
S
,
di
F
/dt =100 A/μs
-
-
65
125
80
160
ns
nC
4)
See figure 16 for gate charge parameter definition
Rev. 1.13
page 3
2007-08-29
IPP048N06L G
1 Power dissipation
P
tot
=f(T
C
);
V
GS
6 V
2 Drain current
I
D
=f(T
C
);
V
GS
10 V
IPB048N06L G
350
120
300
100
250
80
P
tot
[W]
200
I
D
[A]
150
100
50
0
0
50
100
150
200
60
40
20
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
0
limited by on-state
resistance
1 μs
10 μs
0.5
10
2
DC
100 μs
1 ms
10
-1
0.2
Z
thJC
[K/W]
0.1
I
D
[A]
10 ms
10
1
0.05
10
-2
10
0
0.02
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.13
page 4
2007-08-29
IPP048N06L G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
240
5V
5.5 V
10V
4.5 V
IPB048N06L G
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
10
3.5 V
200
4V
8
4V
160
R
DS(on)
[m ]
6
I
D
[A]
120
3.5 V
4.5 V
5V
4
5.5 V
6V
10 V
80
2
40
3V
0
0
1
2
3
0
0
40
80
120
160
200
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
200
180
160
140
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
240
200
160
120
100
80
60
40
20
0
0
1
2
3
4
0
0
40
80
120
160
200
175 °C
g
fs
[S]
25 °C
I
D
[A]
120
80
40
V
GS
[V]
I
D
[A]
Rev. 1.13
page 5
2007-08-29
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