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DTA114TKA

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
CategoryThe transistor   
File Size339KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
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DTA114TKA Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

DTA114TKA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
MCC
Features
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
DTA114TKA
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent circuit)
The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects
Only the on/off conditions need to be set for operation, making
device design easy
PNP Digital Transistor
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Collector Dissipation
Junction Temperature Range
Storage Temperature Range
A
SOT-23-3L
D
B
1.
Base
2.
Emitter
3.
Collector
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Value
-50
-50
-5
-100
200
-55~150
-55~150
Unit
V
V
V
mA
mW
G
K
3
1
2
C
E
H
J
Electrical Characteristics
Sym
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
f
T
DIMENSIONS
Parameter
Collector-Base Breakdown Voltage
(I
C
=-50uA, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=-1mA, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=-50uA, I
C
=0)
Collector Cut-off Current
(V
CB
=-50V, I
E
=0)
Emitter Cut-off Current
(V
EB
=-4V, I
C
=0)
DC Current Gain
(V
CE
=-5V, I
C
=-1mA)
Collector-Emitter Saturation Voltage
(I
C
=-10mA, I
B
=-1mA)
Input Resistor
Transition Frequency
(V
CE
=-10V, I
C
=-5mA, f=100MHz)
Min
-50
-50
-5
---
---
100
---
7
---
Typ
---
---
---
---
---
250
---
10
250
Max
---
---
---
-0.5
-0.5
600
-0.3
13
---
Unit
V
V
V
uA
uA
---
V
MHz
DIM
A
B
C
D
E
G
H
J
K
MIN
.113
.108
.061
.036
.073
.0016
.044
.006
.013
INCHES
MAX
.117
.112
.065
.038
.077
.0039
.049
.007
.015
Suggested Solder
Pad Layout
.031
.800
MIN
2.87
2.75
1.55
.925
1.85
.04
1.12
.14
.34
MM
MAX
2.97
2.85
1.65
.975
1.95
.100
1.25
.17
.37
NOTE
.035
.900
.087
2.200
inches
mm
.037
.950
.037
.950
www.mccsemi.com
Revision: 1
2005/06/29

DTA114TKA Related Products

DTA114TKA DTA114TKAP
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Is it Rohs certified? incompatible conform to
Maker Micro Commercial Components (MCC) Micro Commercial Components (MCC)
Parts packaging code SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 100
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 260
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN LEAD MATTE TIN
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 10
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz
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