CJQ4459 datasheet, PDF - EEWORLD Datasheet

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CJQ4459: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 6.5A Gate-source threshold voltage: 2.4V @ 250uA Drain-source on-resistance: 46mΩ @ 6.5A, 10V Maximum power dissipation (Ta=25°C): 1.4W Type: P channel P channel 30V 6.5A; CategoryDiscrete semiconductor MOS (field effect tube); File Size1MB，5 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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CJQ4459 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 6.5A Gate-source threshold voltage: 2.4V @ 250uA Drain-source on-resistance: 46mΩ @ 6.5A, 10V Maximum power dissipation (Ta=25°C): 1.4W Type: P channel P channel 30V 6.5A

CJQ4459 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	6.5A
Gate-source threshold voltage	2.4V @ 250uA
Drain-source on-resistance	46mΩ @ 6.5A,10V
Maximum power dissipation (Ta=25°C)	1.4W
type	P channel

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOP8 Plastic-Encapsulate MOSFETS

CJQ4459

(BR)DSS

-30V

P-Channel Power MOSFET

DS(on)

MAX

46mΩ@

-10V

72mΩ@

-4.5

-6.5A

SOP8

DESCRIPTION

The

CJQ4459

combines advanced trench MOSFET technology with a low

resistance package to provide extremely low R

DS(ON)

. This device is ideal for

load switch and battery protection applications

APPLICATIONS

Battery Switch

Load Switch

MARKING

Q4459= Device code

Solid dot=Pin1 indicator

Solid dot = Green molding compound device,

if none, the normal device

YY=Date Code

Front side

Equivalent Circuit

MAXIMUM RATINGS ( T

=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Single Pulsed Avalanche Energy

Power Dissipation

Thermal Resistance from Junction to Ambient

Junction Temperature

Storage Temperature Range

Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)

(1).E

condition: V

=-50V,L=0.1mH, R

=25Ω, Starting T

= 25°C

Symbol

(1)

Limit

-30

±20

-6.5

-26

1.4

150

-55 ~+150

260

Unit

℃/W

℃

θJA

stg

ZZZFMHOHFFRP

DMar6

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