SD101AW 环保 datasheet, PDF - EEWORLD Datasheet

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SD101AW 环保: DescriptionDC reverse withstand voltage (Vr): 60V Average rectified current (Io): 15mA Forward voltage drop (Vf): 1V @ 15mA 60V, 15mA, VF=1V@15mA; CategoryDiscrete semiconductor Schottky diode; File Size384KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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SD101AW 环保 Overview

DC reverse withstand voltage (Vr): 60V Average rectified current (Io): 15mA Forward voltage drop (Vf): 1V @ 15mA 60V, 15mA, VF=1V@15mA

SD101AW 环保 Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	60V
Average rectified current (Io)	15mA
Forward voltage drop (Vf)	1V @ 15mA

SD101AW 环保 Preview

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diodes

SD101AW

SCHOTTKY

BARRIER

DIODE

FEATURES

Low Forward Voltage Drop

Guard Ring Construction for Transient Protection

Negligible Reverse Recovery Time

SOD-123

MARKING: S1

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

Parameter

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Forward Continuous Current

Repetitive Peak Forward Current @t<1.0s

@t=10µs

Power Dissipation

Thermal Resistance Junction to Ambient

Junction temperature

Symbol

RRM

RWM

R(RMS)

FRM

θJA

Value

2.0

400

250

125

Unit

℃/W

℃

Storage Temperature

STG

-55~+150

Electrical Ratings @Ta=25℃

Parameter

Reverse breakdown voltage

Forward voltage

Symbol

Min

Typ

Max

Unit

Conditions

IR=10µA

=1.0mA

=15mA

=50V

0.41

1.00

0.2

Reverse current

µA

Capacitance between terminals

Reverse recovery time

2.0

1．0

=0V,f=1.0MHz

=5mA

Irr=0.1XI

=100Ω

D,Jul,2012

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