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Datasheet> All Categories > Discrete semiconductor> Switching diode> MMBD4148CC
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MMBD4148CC

Description
Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 10mA
CategoryDiscrete semiconductor    Switching diode   
File Size192KB，2 Pages
ManufacturerShenzhen Heketai Electronics Co., Ltd.
Websitehttp://www.heketai.com
Founded in 1992, Hekotech is a high-tech innovative enterprise specializing in the R&D, design, packaging, testing, production and sales of semiconductor analog chips and discrete devices. The product line includes lithium battery protection IC, charging management IC, LDO, MOSFET, diode, TVS, bridge stack, triode and other discrete devices and integrated circuits, providing customers with application solutions and on-site technical support services. The company has ISO9001, ISO14001, IATF16949 quality system certification. The products include semiconductors and passive components, which are widely used in power supply, lighting, medical electronics, small appliances, communications, security, instruments, industrial control, automotive electronics and other fields.
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MMBD4148CC Overview

Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 10mA

MMBD4148CC Parametric

Parameter NameAttribute value
Reverse recovery time (trr)4ns
DC reverse withstand voltage (Vr)100V
Average rectified current (Io)200mA
Forward voltage drop (Vf)1V @ 10mA

MMBD4148CC Preview

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Plastic-Encapsulate Diodes
SCHOTTKY DIODES
FEATURES
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
MMBD4148A/CA/CC/SE
MARKING
SOT-23
MMBD4148A:5H
MMBD4148CA:D6
MMBD4148CC:D5
MMBD4148SE:D4
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Paramet
er
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current
@=1.0μs
@=1.0
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
P
D
R
θJA
T
j
T
STG
Limits
100
100
53
300
200
2.0
1.0
350
357
150
-65~+150
Unit
V
V
V
mA
mA
A
mW
/W
Electrical Ratings @TA=25
Parameter
Reverse Breakdown Voltage
Symbol
V
(BR) R1
V
(BR) R2
Min.
100
75
Typ.
Max.
Unit
V
V
I
R
=100μA
I
R
=5μA
I
F
=10mA
V
R
=75V
V
R
=25V
Conditions
Forward voltage
Reverse current
V
F
I
R1
I
R2
1
5
25
4
V
μA
nA
pF
Capacitance between terminals
C
T
V
R
=0V,f=1MHz
I
F
=I
R
=10mA,
Reverse Recovery Time
t
rr
4
ns
V
R
=6V,Irr=0.1XI
R
,R
L
=100Ω
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P2-P1

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