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1Z10TPA1

Description
DIODE 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size96KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

1Z10TPA1 Overview

DIODE 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

1Z10TPA1 Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage11 V
Minimum breakdown voltage9 V
Breakdown voltage nominal value10 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation200 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum reverse current10 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

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