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HX2305

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 88mΩ @ 3A, 4.5V Maximum power dissipation ( Ta=25°C): 1W Type: P-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size184KB,1 Pages
ManufacturerShenzhen HengJiaXing Electronics Co., Ltd.
Websitehttp://www.hjxai.com/
Shenzhen Hengjiaxing Electronics Co., Ltd. was established on May 20, 2010. It is a comprehensive enterprise integrating agency, supporting and technical solutions. It has always focused on power management IC and MOS tubes. The brands of the original authorized agents are: Weimeng, Tuowei, Nanlin, Fuman, Quanxin and Tianyuan, and it has its own brand: Hengjiaxing. Products are widely used in: wireless charging, mobile power, drones, security monitoring, car navigation, driving records, toys and other fields. The company adheres to the warehousing business philosophy, with integrity, professionalism, gratitude and win-win as its purpose, so that customers can buy with confidence, use comfortably and cooperate happily! Providing the most satisfactory service to customers is its responsibility. Through a powerful system, it provides standardized, professional, diversified and comprehensive high-quality services to enterprises, and is deeply trusted and supported by domestic and foreign manufacturers and distributors! Through years of hard work, the company's management has become more and more perfect, with rich product resources, a strong technical R&D team, excellent sales elites and a high-quality service team. It is willing to work hand in hand with upstream and downstream partners to make progress together, achieve mutual benefit and win-win results, create brilliance, and do its utmost to help the Chinese core to flourish!
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HX2305 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 88mΩ @ 3A, 4.5V Maximum power dissipation ( Ta=25°C): 1W Type: P-channel

HX2305 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C3A
Gate-source threshold voltage1.2V @ 250uA
Drain-source on-resistance88mΩ @ 3A,4.5V
Maximum power dissipation (Ta=25°C)1W
typeP channel

HX2305 Preview

Download Datasheet
SOT-23-3Plastic-Encapsulate Transistors
HX2305
MOSFET(P-Channel)
FEATURES
TrenchFET Power MOSFET
MARKING: A5SHB
MAXIMUM RATINGS
(TA=25℃ unless otherwise noted)
Symbol
Parameter
V
DS
V
GS
I
D
P
D
Tj
Tstg
Drain-Source voltage
Gate-Source voltage
Drain current
Power Dissipation
Junction Temperature
Storage Temperature
Value
-20
±12
-3
1
150
-55-150
Units
V
V
A
W
ELECTRICAL CHARACTERISTICS
(Tamb=25℃unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
Diode Forward Current
V
SD
Is
V
GS
=0V, I
D
=-1.3A
-1.2
-1.3
V
A
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
=-10V, I
D
=-2.8A ,
V
GS
=-4.5V
R
GEN
=-60ohm
R
L
=10ohm
V
DS
=-10V, I
D
=-3A,
V
GS
=-4.5V,
11
6.6
113
46
6.1
1.7
1.3
nS
nS
nS
nS
nC
nC
nC
Ciss
Coss
Crss
V
DS
=-10V, V
GS
=0V,
f=1MHz
560
61
55
pF
Symbol
V
(BR)DSS
Vth
(GS)
I
GSS
I
DSS
r
DS(ON)
gfs
Test conditions
V
GS
=0V,I
D
=-250uA
V
DS
= V
GS,
I
D
=-250 uA
V
DS
=0V, V
GS
=±12V
V
DS
=-20V, V
GS
=0V
V
GS
=-4.5V, I
D
=-3A
V
GS
=-2.5V, I
D
=-2A
V
DS
=-5V, I
D
=-5A
57
60
5
MIN
-20
-0.4
-0.7
-1.2
±100
-1
88
100
TYP
MAX
UNIT
V
V
nA
uA
S
1
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