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SD12C

Description
Reverse shutdown voltage (typ): 12V Breakdown voltage (min): 13.3V Polarity: Bidirectional Clamping voltage: 32V Peak pulse current (10/1000us): 11A
CategoryDiscrete semiconductor    TVS diode   
File Size1MB,4 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
Download Datasheet Parametric View All

SD12C Overview

Reverse shutdown voltage (typ): 12V Breakdown voltage (min): 13.3V Polarity: Bidirectional Clamping voltage: 32V Peak pulse current (10/1000us): 11A

SD12C Parametric

Parameter NameAttribute value
Reverse shutdown voltage (typ)12V
Breakdown voltage (minimum value)13.3V
polarityBidirectional
clamping voltage32V
Peak pulse current (10/1000us)11A

SD12C Preview

Download Datasheet
SDxxC
Series
Bi-directional
TVS
Diodes
SOD-323 Plastic-Encapsulate
ESD
Protection
Diodes
DESCRIPTION
The SDxxC Series is designed for applications requiring transient overvoltage protection capability.
They are intended for use in voltage and ESD sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment and other applications. These devices
are ideal for situations where board space is at a premium.
This series has been specifically designed to protect sensitive components which are connected to
power
data and transmission lines from overvoltage caused by ESD(electrostatic discharge), CDE
(Cable Discharge Events),and EFT (electrical fast transients).
Features
350 Watts Peak Pulse Power per
(8/20μs)
IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC61000-4-4 (EFT) 40A (5/50ns)
Protects one I/O line (unidirectional)
Low clamping voltage
Low leakage current
Working voltages : 3V, 5V,
8V,
12V, 15V,
18V,
20V,24V,36V
Meets MSL 1 Requirements
Pin
Configuration
Circuit Diagram
1
2
Applications
Mechanical Characteristics
Package:
SOD-323
Flammability Rating: UL 94V-0
High temperature soldering guaranted:
260℃/10s
Packaging: Tape and Reel
Cell Phone Handsets and Accessories
Microprocessor based equipment
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
Networking and Telecom
Serial and Parallel Ports
Peripherals
Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Parameter
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Peak Pulse Power(tp=8/20us waveform)
Operating Temperature
Storage
Temperature
Lead Solder Temperature – Maximum (10 Second
Duration)
The above data are for reference only.
DN:T20317A0
Symbol
V
ESD
P
PP
T
OPT
T
STG
T
L
Value
±
15
±
8
350
−55 to +150
−55 to +150
260(10
sec.)
Unit
KV
W
°C
°C
°C
http://www.microdiode.com
Rev:2020A0
Page :1
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