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WSR45P10

Description
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 40A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 55mΩ @ 20A, 10V Maximum power dissipation (Ta=25°C): 136W(Tc) Type: P channel P channel.-100V.-40A.44mΩ
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size794KB,10 Pages
ManufacturerWINSOK Semiconductor
Websitehttp://www.winsok.tw/cn/index.aspx
WINSOK is a professional power semiconductor component and analog IC design company. Through continuous product innovation, we constantly accept new challenges in line with market demand and continue to deepen technology research and development. We are committed to providing excellent design and reliable performance products, and meet customer needs with fast response and service. We create value for customers and employees. We also maintain continuous accumulation and breakthroughs, and develop sustainable and permanent development. Let WINSOK contribute to the global intelligent process and become a world-class design company.
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WSR45P10 Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 40A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 55mΩ @ 20A, 10V Maximum power dissipation (Ta=25°C): 136W(Tc) Type: P channel P channel.-100V.-40A.44mΩ

WSR45P10 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C40A(Tc)
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance55mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)136W(Tc)
typeP channel

WSR45P10 Preview

Download Datasheet
WSR45P10
P-Ch MOSFET
General Description
The
WSR45P10
is the highest performance
trench P-Ch MOSFET with extreme high cell
density , which provide excellent R
DSON
and gate
charge for most of the small power switching
and load switch applications.
The
WSR45P10
meet the RoHS and
Green Product requirement with full
function reliability approved.
Product Summery
BV
DSS
-100V
Applications
Inverters
R
DSON
44mΩ
I
D
-40A
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
TO-220AB Pin Configuration
D
G
G
D
S
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
θJC
R
θJA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
Parameter
Rating
-100
±20
175
-55 to 175
-40
-120**
-40
-26
136
68
1.1
62.5
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
Avalanche Ratings
Avalanche Energy, Single Pulsed
L=0.5mH
308***
mJ
Note: * Repetitive rating ; pulse width limiited by junction temperatur
** Drain current is limited by junction temperature
*** VD=-80V
www.winsok.tw
Page 1
Dec.2014
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